P

Inventor

ARIMOTO KAZUTAMI

JP200 patents
⚠️ This page may combine multiple inventors who share the name “ARIMOTO KAZUTAMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

45 patents
US6449204B1Sep 10, 2002

Dynamic semiconductor memory device capable of rearranging data storage from a one bit/one cell scheme in a normal mode to a one bit/two cell scheme in a twin-cell mode for lengthening a refresh interval

MITSUBISHI ELECTRIC CORP190 citations99
US6232793B1May 15, 2001

Switched backgate bias for FET

MITSUBISHI ELECTRIC CORP140 citations99
US6151244ANov 21, 2000

Dynamic semiconductor memory device

MITSUBISHI ELECTRIC CORP462 citations99
US5877978AMar 2, 1999

Semiconductor memory device

MITSUBISHI ELECTRIC CORP314 citations99
US5838047ANov 17, 1998

CMOS substrate biasing for threshold voltage control

MITSUBISHI ELECTRIC CORP140 citations99
US5726946AMar 10, 1998

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP224 citations99
US5646900AJul 8, 1997

Sense amplifier including MOS transistors having threshold voltages controlled dynamically in a semiconductor memory device

MITSUBISHI ELECTRIC CORP314 citations99
US5610533AMar 11, 1997

Switched substrate bias for logic circuits

MITSUBISHI ELECTRIC CORP262 citations99
US4977542ADec 11, 1990

Dynamic semiconductor memory device of a twisted bit line system having improved reliability of readout

MITSUBISHI ELECTRIC CORP446 citations99
US6498396B1Dec 24, 2002

Semiconductor chip scale package and ball grid array structures

MITSUBISHI ELECTRIC CORP85 citations98
US6452859B1Sep 17, 2002

Dynamic semiconductor memory device superior in refresh characteristics

MITSUBISHI ELECTRIC CORP122 citations98
US6418067B1Jul 9, 2002

Semiconductor memory device suitable for merging with logic

MITSUBISHI ELECTRIC CORP97 citations98
US6256252B1Jul 3, 2001

Memory-embedded semiconductor integrated circuit device having low power consumption

MITSUBISHI ELECTRIC CORP120 citations98
US6088286AJul 11, 2000

Word line non-boosted dynamic semiconductor memory device

MITSUBISHI ELECTRIC CORP121 citations98
US6064621AMay 16, 2000

Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement

MITSUBISHI ELECTRIC CORP103 citations98
US5636163AJun 3, 1997

Random access memory with a plurality amplifier groups for reading and writing in normal and test modes

MITSUBISHI ELECTRIC CORP100 citations98
US5226009AJul 6, 1993

Semiconductor memory device supporting cache and method of driving the same

MITSUBISHI ELECTRIC CORP145 citations98
US5703522ADec 30, 1997

Switched substrate bias for MOS-DRAM circuits

MITSUBISHI ELECTRIC CORP94 citations97
US6643208B2Nov 4, 2003

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP32 citations96
US6414890B2Jul 2, 2002

Semiconductor memory device capable of reliably performing burn-in test at wafer level

MITSUBISHI ELECTRIC CORP64 citations96
US6404056B1Jun 11, 2002

Semiconductor integrated circuit

MITSUBISHI ELECTRIC CORP69 citations96
US6400625B2Jun 4, 2002

Semiconductor integrated circuit device capable of performing operational test for contained memory core at operating frequency higher than that of memory tester

MITSUBISHI ELECTRIC CORP66 citations96
US6388929B1May 14, 2002

Semiconductor memory device performing redundancy repair based on operation test and semiconductor integrated circuit device having the same

MITSUBISHI ELECTRIC CORP71 citations96
US6373321B1Apr 16, 2002

CMOS semiconductor device

MITSUBISHI ELECTRIC CORP46 citations96
US6134171AOct 17, 2000

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP68 citations96
US5959927ASep 28, 1999

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP33 citations96
US5914907AJun 22, 1999

Semiconductor memory device capable of increasing chip yields while maintaining rapid operation

MITSUBISHI ELECTRIC CORP69 citations96
US5872737AFeb 16, 1999

Semiconductor integrated circuit device in which influence of power supply noise on internal circuitry during operation of input/output buffer is prevented

MITSUBISHI ELECTRIC CORP81 citations96
USRE36089EFeb 9, 1999

Column selecting circuit in semiconductor memory device

MITSUBISHI ELECTRIC CORP52 citations96
US5854561ADec 29, 1998

Switched substrate bias for MOS DRAM circuits

MITSUBISHI ELECTRIC CORP59 citations96
US5838627ANov 17, 1998

Arrangement of power supply and data input/output pads in semiconductor memory device

MITSUBISHI ELECTRIC CORP92 citations96
US5822264AOct 13, 1998

Dynamic semiconductor memory device with SOI structure and body refresh circuitry

MITSUBISHI ELECTRIC CORP84 citations96
US5798976AAug 25, 1998

Semiconductor memory device with reduced current consumption in data holding mode

MITSUBISHI ELECTRIC CORP76 citations96
US5687123ANov 11, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP66 citations96
US5659517AAug 19, 1997

Semiconductor memory device with an improved hierarchical power supply line configuration

MITSUBISHI ELECTRIC CORP71 citations96
US5617369AApr 1, 1997

Dynamic semiconductor memory device having excellent charge retention characteristics

MITSUBISHI ELECTRIC CORP50 citations96
US5604710AFeb 18, 1997

Arrangement of power supply and data input/output pads in semiconductor memory device

MITSUBISHI ELECTRIC CORP82 citations96
US5568440AOct 22, 1996

Semiconductor memory device having self-refreshing function

MITSUBISHI ELECTRIC CORP42 citations96
US5510749AApr 23, 1996

Circuitry and method for clamping a boost signal

MITSUBISHI ELECTRIC CORP60 citations96
US5325336AJun 28, 1994

Semiconductor memory device having power line arranged in a meshed shape

MITSUBISHI ELECTRIC CORP47 citations96
US5321646AJun 14, 1994

Layout of a semiconductor memory device

MITSUBISHI ELECTRIC CORP68 citations96
US5249155ASep 28, 1993

Semiconductor device incorporating internal voltage down converting circuit

MITSUBISHI ELECTRIC CORP81 citations96
US5045899ASep 3, 1991

Dynamic random access memory having stacked capacitor structure

MITSUBISHI ELECTRIC CORP61 citations96
US5012472AApr 30, 1991

Dynamic type semiconductor memory device having an error checking and correcting circuit

MITSUBISHI ELECTRIC CORP54 citations96
US4947376AAug 7, 1990

Charge-transfer sense amplifier for dram and operating method therefor

MITSUBISHI ELECTRIC CORP55 citations96

RENESAS TECH CORP

4 patents

SHIMANO HIROKI

1 patent

Showing the top 50 of 200 patents by PatentIndex Score.