Inventor
ARIMOTO KAZUTAMI
JP200 patents
⚠️ This page may combine multiple inventors who share the name “ARIMOTO KAZUTAMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
45 patentsUS6449204B1Sep 10, 2002
Dynamic semiconductor memory device capable of rearranging data storage from a one bit/one cell scheme in a normal mode to a one bit/two cell scheme in a twin-cell mode for lengthening a refresh interval
MITSUBISHI ELECTRIC CORP190 citations99
US6232793B1May 15, 2001
Switched backgate bias for FET
MITSUBISHI ELECTRIC CORP140 citations99
US6151244ANov 21, 2000
Dynamic semiconductor memory device
MITSUBISHI ELECTRIC CORP462 citations99
US5877978AMar 2, 1999
Semiconductor memory device
MITSUBISHI ELECTRIC CORP314 citations99
US5838047ANov 17, 1998
CMOS substrate biasing for threshold voltage control
MITSUBISHI ELECTRIC CORP140 citations99
US5726946AMar 10, 1998
Semiconductor integrated circuit device having hierarchical power source arrangement
MITSUBISHI ELECTRIC CORP224 citations99
US5646900AJul 8, 1997
Sense amplifier including MOS transistors having threshold voltages controlled dynamically in a semiconductor memory device
MITSUBISHI ELECTRIC CORP314 citations99
US5610533AMar 11, 1997
Switched substrate bias for logic circuits
MITSUBISHI ELECTRIC CORP262 citations99
US4977542ADec 11, 1990
Dynamic semiconductor memory device of a twisted bit line system having improved reliability of readout
MITSUBISHI ELECTRIC CORP446 citations99
US6498396B1Dec 24, 2002
Semiconductor chip scale package and ball grid array structures
MITSUBISHI ELECTRIC CORP85 citations98
US6452859B1Sep 17, 2002
Dynamic semiconductor memory device superior in refresh characteristics
MITSUBISHI ELECTRIC CORP122 citations98
US6418067B1Jul 9, 2002
Semiconductor memory device suitable for merging with logic
MITSUBISHI ELECTRIC CORP97 citations98
US6256252B1Jul 3, 2001
Memory-embedded semiconductor integrated circuit device having low power consumption
MITSUBISHI ELECTRIC CORP120 citations98
US6088286AJul 11, 2000
Word line non-boosted dynamic semiconductor memory device
MITSUBISHI ELECTRIC CORP121 citations98
US6064621AMay 16, 2000
Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement
MITSUBISHI ELECTRIC CORP103 citations98
US5636163AJun 3, 1997
Random access memory with a plurality amplifier groups for reading and writing in normal and test modes
MITSUBISHI ELECTRIC CORP100 citations98
US5226009AJul 6, 1993
Semiconductor memory device supporting cache and method of driving the same
MITSUBISHI ELECTRIC CORP145 citations98
US5703522ADec 30, 1997
Switched substrate bias for MOS-DRAM circuits
MITSUBISHI ELECTRIC CORP94 citations97
US6643208B2Nov 4, 2003
Semiconductor integrated circuit device having hierarchical power source arrangement
MITSUBISHI ELECTRIC CORP32 citations96
US6414890B2Jul 2, 2002
Semiconductor memory device capable of reliably performing burn-in test at wafer level
MITSUBISHI ELECTRIC CORP64 citations96
US6404056B1Jun 11, 2002
Semiconductor integrated circuit
MITSUBISHI ELECTRIC CORP69 citations96
US6400625B2Jun 4, 2002
Semiconductor integrated circuit device capable of performing operational test for contained memory core at operating frequency higher than that of memory tester
MITSUBISHI ELECTRIC CORP66 citations96
US6388929B1May 14, 2002
Semiconductor memory device performing redundancy repair based on operation test and semiconductor integrated circuit device having the same
MITSUBISHI ELECTRIC CORP71 citations96
US6373321B1Apr 16, 2002
CMOS semiconductor device
MITSUBISHI ELECTRIC CORP46 citations96
US6134171AOct 17, 2000
Semiconductor integrated circuit device having hierarchical power source arrangement
MITSUBISHI ELECTRIC CORP68 citations96
US5959927ASep 28, 1999
Semiconductor integrated circuit device having hierarchical power source arrangement
MITSUBISHI ELECTRIC CORP33 citations96
US5914907AJun 22, 1999
Semiconductor memory device capable of increasing chip yields while maintaining rapid operation
MITSUBISHI ELECTRIC CORP69 citations96
US5872737AFeb 16, 1999
Semiconductor integrated circuit device in which influence of power supply noise on internal circuitry during operation of input/output buffer is prevented
MITSUBISHI ELECTRIC CORP81 citations96
USRE36089EFeb 9, 1999
Column selecting circuit in semiconductor memory device
MITSUBISHI ELECTRIC CORP52 citations96
US5854561ADec 29, 1998
Switched substrate bias for MOS DRAM circuits
MITSUBISHI ELECTRIC CORP59 citations96
US5838627ANov 17, 1998
Arrangement of power supply and data input/output pads in semiconductor memory device
MITSUBISHI ELECTRIC CORP92 citations96
US5822264AOct 13, 1998
Dynamic semiconductor memory device with SOI structure and body refresh circuitry
MITSUBISHI ELECTRIC CORP84 citations96
US5798976AAug 25, 1998
Semiconductor memory device with reduced current consumption in data holding mode
MITSUBISHI ELECTRIC CORP76 citations96
US5687123ANov 11, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP66 citations96
US5659517AAug 19, 1997
Semiconductor memory device with an improved hierarchical power supply line configuration
MITSUBISHI ELECTRIC CORP71 citations96
US5617369AApr 1, 1997
Dynamic semiconductor memory device having excellent charge retention characteristics
MITSUBISHI ELECTRIC CORP50 citations96
US5604710AFeb 18, 1997
Arrangement of power supply and data input/output pads in semiconductor memory device
MITSUBISHI ELECTRIC CORP82 citations96
US5568440AOct 22, 1996
Semiconductor memory device having self-refreshing function
MITSUBISHI ELECTRIC CORP42 citations96
US5510749AApr 23, 1996
Circuitry and method for clamping a boost signal
MITSUBISHI ELECTRIC CORP60 citations96
US5325336AJun 28, 1994
Semiconductor memory device having power line arranged in a meshed shape
MITSUBISHI ELECTRIC CORP47 citations96
US5321646AJun 14, 1994
Layout of a semiconductor memory device
MITSUBISHI ELECTRIC CORP68 citations96
US5249155ASep 28, 1993
Semiconductor device incorporating internal voltage down converting circuit
MITSUBISHI ELECTRIC CORP81 citations96
US5045899ASep 3, 1991
Dynamic random access memory having stacked capacitor structure
MITSUBISHI ELECTRIC CORP61 citations96
US5012472AApr 30, 1991
Dynamic type semiconductor memory device having an error checking and correcting circuit
MITSUBISHI ELECTRIC CORP54 citations96
US4947376AAug 7, 1990
Charge-transfer sense amplifier for dram and operating method therefor
MITSUBISHI ELECTRIC CORP55 citations96
RENESAS TECH CORP
4 patentsUS7791962B2Sep 7, 2010
Semiconductor device and semiconductor signal processing apparatus
RENESAS TECH CORP411 citations99
US7562198B2Jul 14, 2009
Semiconductor device and semiconductor signal processing apparatus
RENESAS TECH CORP428 citations99
US7139208B2Nov 21, 2006
Refresh-free dynamic semiconductor memory device
RENESAS TECH CORP40 citations96
US6785157B2Aug 31, 2004
Semiconductor memory device having a memory cell structure of reduced occupying area
RENESAS TECH CORP55 citations96
SHIMANO HIROKI
1 patentShowing the top 50 of 200 patents by PatentIndex Score.