Inventor

RAMASWAMY NIRMAL

US47 patents

⚠️ This page may combine multiple inventors who share the name “RAMASWAMY NIRMAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAMASWAMY NIRMAL

MICRON TECHNOLOGY INC

Protection of tunnel dielectric using epitaxial silicon

Method of forming complex oxide nanodots for a charge trap

Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors

Integrated circuitry

Transistors, memory cells and semiconductor constructions

Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds

Integrated circuitry

Method of forming a vertical transistor

Method of forming epitaxial silicon-comprising material

Method of forming a layer comprising epitaxial silicon and a field effect transistor

Memory cells having electrically conductive nanodots and apparatus having such memory cells

Memory cells having electrically conductive nanodots

Method of forming a pseudo SOI substrate and semiconductor devices

Thickened sidewall dielectric for memory cell

Methods of forming layers comprising epitaxial silicon

Integrated circuitry

Methods of forming layers comprising epitaxial silicon

Methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses

Substrate susceptors for receiving semiconductor substrates to be deposited upon

Semiconductor device including container having epitaxial silicon therein

Method of forming a vertical transistor

Methods of growing epitaxial silicon

Methods for deposition of semiconductor material

Memory cells having electrically conductive nanodots and apparatus having such memory cells

Cross-point memory utilizing Ru/Si diode

Charge storage nodes with conductive nanodots

Cross-point memory utilizing Ru/Si diode

Multi-level charge storage transistors and associated methods

Floating-gate memory cell and memory device and electronic system therewith

Method of forming a layer comprising epitaxial silicon

Deposition methods

Pseudo SOI substrate and associated semiconductor devices

RAMASWAMY NIRMAL

Charge-trap based memory

Charge storage nodes with conductive nanodots

Dielectric charge-trapping materials having doped metal sites

Methods of forming layers comprising epitaxial silicon

Nonvolatile memory cells and methods of forming nonvolatile memory cell

Cross-point memory utilizing Ru/Si diode

Charge-trap based memory

Device having complex oxide nanodots

INTEL CORP

Metal floating gate composite 3D NAND memory devices and associated methods

Floating gate structures

WEIMER RON

Thickened sidewall dielectric for memory cell

Thickened sidewall dielectric for memory cell

SONY CORP

Interfacial cap for electrode contacts in memory cell arrays

ROUND ROCK RES LLC

Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds

SONY SEMICONDUCTOR SOLUTIONS CORP

Interfacial cap for electrode contacts in memory cell arrays