Inventor

MINE TOSHIYUKI

JP83 patents

⚠️ This page may combine multiple inventors who share the name “MINE TOSHIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MINE TOSHIYUKI

HITACHI LTD

Semiconductor device for reducing leak currents and controlling a threshold voltage and using a thin channel structure

Gain cell type non-volatile memory having charge accumulating region charged or discharged by channel current from a thin film channel path

Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture

Controllable conduction device

Controllable conduction device

Semiconductor memory device

Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device

Method of making a non-volatile memory and semiconductor device

Semiconductor device having groove isolation structure and gate oxide films with different thickness

Semiconductor memory device

Semiconductor device and production method thereof

Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture

Method of manufacturing semiconductor integrated circuit device

Semiconductor device with multilayer silicon oxide silicon nitride dielectric

Electro-acoustic transducer device

Semiconductor device comprising metal insulator metal (MIM) capacitor

Semiconductor material, field effect transistor and manufacturing method thereof

Fabrication process for semiconductor device

Method of forming a quantum memory element having a film of amorphous silicon

Process for manufacturing a quantum memory element device

Water leak sensing system and method

Controllable conduction device with electrostatic barrier

RENESAS TECH CORP

Method for fabrication of semiconductor device

Nonvolatile semiconductor memory device and manufacturing method thereof

MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

Semiconductor memory device

Semiconductor device and method manufacturing the same

Nonvolatile semiconductor memory device

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

Nonvolatile semiconductor memory device and method of manufacturing thereof

Semiconductor integrated circuit device and manufacturing method thereof

Manufacturing method of semiconductor device

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

Semiconductor device and manufacturing thereof

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

SHIMA AKIO

Semiconductor storage device

Semiconductor storage device

Semiconductor device having stacked structural bodies and method for manufacturing the same

MINE TOSHIYUKI

Non-volatile memory device with a silicon nitride charge holding film having an excess of silicon

Field effect silicon carbide transistor

MOS field effect transistor

RENESAS ELECTRONICS CORP

Semiconductor device and method of manufacturing the same

Semiconductor memory device and manufacturing method of the same

MACHIDA SHUNTARO

Ultrasonic transducer and ultrasonic diagnostic device using same

HISAMOTO DIGH

Semiconductor device

YANAGI ITARU

Semiconductor storage device and manufacturing method thereof