Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301 . The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO) n SiH 4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.

1. A method of manufacturing a semiconductor device comprising:
 forming, on a substrate in which semiconductor elements are formed, metal wiring having a region at least a portion of the peripheral surface thereof being made of a material that predominantly comprises copper; and 
 forming, to cover the region of the metal wiring made of the material that predominantly comprises copper, an insulative diffusion barrier layer comprising oxygen, silicon and nitrogen as main constituent elements in which a concentration of the nitrogen is from 0.3 to 14 atom % by using an inorganic silane gas or an organic silane gas and, a nitrogen oxide gas or a gas mixture of an oxygen atom-containing gas and a nitrogen atom-containing gas by a plasma CVD method. 
 
     
     
       2. A method of manufacturing a semiconductor device as defined in  claim 1 , wherein the inorganic silane gas at least contains one kind of gas selected at least from the group consisting of higher silanes represented by the general formula: Si n H (2n+2)  where n is an integer of 1 or greater, and the organic silane gas at least contains one kind of gas selected at least from the group of the general formula: R n SiH 4−n , (RO) n SiH 4−n , R m Si 2 H 6−m , (RO) m Si 2 H 6−m , (RO) n SiR′ 4−n  in which n is an integer in a range of 1 to 4, m is an integer in a range of 1 to 6, R and R′ each represents an alkyl group, an aryl group or a derivative thereof. 
     
     
       3. A method of manufacturing a semiconductor device as defined in  claim 1 , wherein the nitrogen oxide gas at least contains one kind of gas selected at least from the group consisting of N 2 O, NO and NO 2 , the oxygen atom-containing gas at least contains one kind of gas selected at least from the group consisting of O 2 , CO, CO 2 , H 2 O, N 2 O, NO and NO 2 , and the nitrogen atom-containing gas at least contains one kind of gas selected at least from the group consisting of N 2 , NH 3 , N 2 O, NO and NO 2 . 
     
     
       4. A method of manufacturing a semiconductor device as defined in  claim 2 , wherein the nitrogen oxide gas at least contains one kind of gas selected at least from the group consisting of N 2 O, NO and NO 2 , the oxygen atom-containing gas at least contains one kind of gas selected at least from the group consisting of O 2 , CO, CO 2 , H 2 O, N 2 O, NO and NO 2 , and the nitrogen atom-containing gas at least contains one kind of gas selected at least from the group consisting of N 2 , NH 3 , N 2 O, NO and NO 2 . 
     
     
       5. A method of manufacturing a semiconductor device as defined in  claim 1 ,
 wherein the metal wiring having the region at least a portion of the peripheral surface thereof made of a material that predominantly comprises copper comprises a first conductive barrier layer formed on the side of the substrate. 
 
     
     
       6. A method of manufacturing a semiconductor device as defined in  claim 5 ,
 wherein the inorganic silane gas at least contains one kind of gas selected at least from the group consisting of higher silanes represented by the general formula: Si n H (2n+2)  where n is an integer of 1 or greater, and the organic silane gas at least contains one kind of gas selected at least from the group of the general formula: R n SiH 4−n , (RO) n SiH4−n, R m Si 2 H 6−m , (RO) m Si 2 H 6−m , (RO) n SiR′ 4−n  in which n is an integer in a range of 1 to 4, m is an integer in a range of 1 to 6, R and R′ each represents an alkyl group, an aryl group or a derivative thereof. 
 
     
     
       7. A method of manufacturing a semiconductor device as defined in  claim 5 ,
 wherein the nitrogen oxide gas at least contains one kind of gas selected at least from the group consisting of N 2 O, NO and NO 2 , the oxygen atom-containing gas at least contains one kind of gas selected at least from the group consisting of O 2 , CO, CO 2 , H 2 O, N 2 O, NO and NO 2 , and the nitrogen atom-containing gas at least contains one kind of gas selected at least from the group consisting of N 2 , NH 3 , N 2 O, NO and NO 2 . 
 
     
     
       8. A method of manufacturing a semiconductor device as defined in  claim 6 ,
 wherein the nitrogen oxide gas at least contains one kind of gas selected at least from the group consisting of N 2 O, NO and NO 2 , the oxygen atom-containing gas at least contains one kind of gas selected at least from the group consisting of O 2 , CO, CO 2 , H 2 O, N 2 O, NO and NO 2 , and the nitrogen atom-containing gas at least contains one kind of gas selected at least from the group consisting of N 2 , NH 3 , N 2 O, NO and NO 2 .