Inventor

LOCHTEFELD ANTHONY J

US102 patents

⚠️ This page may combine multiple inventors who share the name “LOCHTEFELD ANTHONY J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LOCHTEFELD ANTHONY J

AMBERWAVE SYSTEMS CORP

Strained-semiconductor-on-insulator device structures with elevated source/drain regions

Methods of forming strained-semiconductor-on-insulator finFET device structures

Strained-semiconductor-on-insulator device structures

Shallow trench isolation process

Lattice-mismatched semiconductor structures on insulators

Shallow trench isolation process

Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

Strained-semiconductor-on-insulator finFET device structures

Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

Solutions for integrated circuit integration of alternative active area materials

Semiconductor devices having strained dual channel layers

Gate material for semiconductor device fabrication

Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain

Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes

Strained-semiconductor-on-insulator device structures

Methods for preserving strained semiconductor substrate layers during CMOS processing

Buried-channel devices and substrates for fabrication of semiconductor-based devices

Methods of fabricating semiconductor devices having strained dual channel layers

Dynamic random access memory trench capacitors

TAIWAN SEMICONDUCTOR MFG

Tri-gate field-effect transistors formed by aspect ratio trapping

Lattice-mismatched semiconductor structures and related methods for device fabrication

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Formation of devices by epitaxial layer overgrowth

Methods for forming semiconductor device structures

Semiconductor diodes fabricated by aspect ratio trapping with coalesced films

Tri-gate field-effect transistors formed by aspect ration trapping

III-V semiconductor device structures

Tri-gate field-effect transistors formed by aspect ratio trapping

Methods for forming III-V semiconductor device structures

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Multi-junction solar cells

Semiconductor diodes fabricated by aspect ratio trapping with coalesced films

LOCHTEFELD ANTHONY J

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Lattice-mismatched semiconductor structures and related methods for device fabrication

Diode-based devices and methods for making the same

Diode-based devices and methods for making the same

Devices formed from a non-polar plane of a crystalline material and method of making the same

Methods for forming semiconductor device structures

Tri-gate field-effect transistors formed by aspect ratio trapping

TAIWAN SEMICONDUCTOR MFG CO LTD

Lattice-mismatched semiconductor structures and related methods for device fabrication

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Defect reduction using aspect ratio trapping

Methods for forming semiconductor device structures

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

BAI JIE

Defect reduction using aspect ratio trapping

Defect reduction using aspect ratio trapping

LI JIZHONG

Light-emitter-based devices with lattice-mismatched semiconductor structures

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication