Methods for forming III-V semiconductor device structures

Abstract

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

1. A method for forming a structure, the method comprising:
 forming a first semiconductor structure by forming a compositionally graded layer over a substrate; 
 forming a second semiconductor structure by bonding the first semiconductor structure to a handle structure; and 
 removing the substrate from the second semiconductor structure, 
 wherein the compositionally graded layer comprises at least one III-V compound, and the handle structure comprises a handle layer, the handle layer consisting essentially of a dielectric material. 
 
     
     
       2. The method of  claim 1 , further comprising planarizing the first semiconductor structure prior to bonding. 
     
     
       3. The method of  claim 1 , wherein forming the first semiconductor structure further comprises forming a compositionally uniform relaxed layer above the compositionally graded layer. 
     
     
       4. The method of  claim 3 , wherein the compositionally uniform relaxed layer comprises at least one III-V compound. 
     
     
       5. The method of  claim 1 , further comprising cleaning at least one of the first semiconductor structure and the handle structure by a wet chemical process prior to bonding. 
     
     
       6. The method of  claim 1 , further comprising plasma activating at least one of the first semiconductor structure and the handle structure by a wet chemical process prior to bonding. 
     
     
       7. The method of  claim 1 , further comprising fabricating a semiconductor device over the second semiconductor structure. 
     
     
       8. The method of  claim 7 , wherein the semiconductor device comprises at least one transistor. 
     
     
       9. The method of  claim 1 , wherein a bond strength of the second semiconductor structure is greater than approximately 1000 mJ/m 2 . 
     
     
       10. The method of  claim 1 , wherein a bonding void density of the second semiconductor structure is less than approximately 0.3 voids/cm 2 . 
     
     
       11. The method of  claim 1 , wherein the compositionally graded layer comprises at least one of GaAs, InGaAs, or AlGaAs. 
     
     
       12. The method of  claim 1 , wherein the dielectric material comprises SiO 2 . 
     
     
       13. A method for forming a structure, the method comprising:
 forming a first semiconductor structure by forming a compositionally graded layer over a substrate; 
 forming a second semiconductor structure by bonding the first semiconductor structure to a handle structure; and 
 removing the substrate from the second semiconductor structure, 
 wherein the compositionally graded layer comprises at least one III-V compound, and the handle structure comprises a bulk relaxed substrate consisting essentially of silicon. 
 
     
     
       14. The method of  claim 13 , wherein the compositionally graded layer comprises at least one of GaAs, InGaAs, or AlGaAs.