Inventor · disambiguated record
Richard Hammond
Also filed as: HAMMOND RICHARD · HAMMOND RICHARD P
68 granted patents·19 pending applications·3,029 citations·filing 1997–2023
99Inventor score
Files withAMBERWAVE SYSTEMS CORP24QUALCOMM INC12TAIWAN SEMICONDUCTOR MFG12TAIWAN SEMICONDUCTOR MFG CO LTD9IQE PLC7
Top patents by PatentIndex Score
87 records- 0199US9780210B1Backside semiconductor growthQUALCOMM INC·Filed 2016·Granted Oct 3, 2017·71 cites·30 claims
- 0299US7420201B2Strained-semiconductor-on-insulator device structures with elevated source/drain regionsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 2, 2008·80 cites·25 claims
- 0399US7109516B2Strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 19, 2006·100 cites·15 claims
- 0499US7074623B2Methods of forming strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 11, 2006·226 cites·6 claims
- 0599US6995430B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Feb 7, 2006·485 cites·14 claims
- 0699US6831292B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Dec 14, 2004·361 cites·62 claims
- 0799US6350993B1High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 1999·Granted Feb 26, 2002·404 cites·41 claims
- 0898US10134837B1Porous silicon post processingQUALCOMM INC·Filed 2017·Granted Nov 20, 2018·54 cites·13 claims
- 0998US7709828B2RF circuits including transistors having strained material layersTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 4, 2010·138 cites·19 claims
- 1097US10784348B2Porous semiconductor handle substrateQUALCOMM INC·Filed 2017·Granted Sep 22, 2020·29 cites·14 claims
- 1197US7217603B2Methods of forming reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted May 15, 2007·41 cites·42 claims
- 1297US6900094B2Method of selective removal of SiGe alloysAMBERWAVE SYSTEMS CORP·Filed 2002·Granted May 31, 2005·130 cites·13 claims
- 1397US6583015B2Gate technology for strained surface channel and strained buried channel MOSFET devicesAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jun 24, 2003·152 cites·25 claims
- 1495US7838392B2Methods for forming III-V semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 23, 2010·17 cites·14 claims
- 1595US7588994B2Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strainAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 15, 2009·17 cites·24 claims
- 1695US7259388B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 21, 2007·18 cites·18 claims
- 1794US8026534B2III-V semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Sep 27, 2011·10 cites·20 claims
- 1894US7297612B2Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Nov 20, 2007·16 cites·16 claims
- 1994US6779187B1Method and system for dynamic interception of function calls to dynamic link libraries into a windowed operating systemNOVADIGM INC·Filed 2000·Granted Aug 17, 2004·102 cites·32 claims
- 2093US9064930B2Methods for forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·7 cites·20 claims
- 2191US8586452B2Methods for forming semiconductor device structuresLOCHTEFELD ANTHONY J·Filed 2011·Granted Nov 19, 2013·6 cites·19 claims
- 2290US6982474B2Reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Jan 3, 2006·28 cites·15 claims
- 2389US7776697B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 17, 2010·9 cites·19 claims
- 2489US6858502B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2001·Granted Feb 22, 2005·39 cites·30 claims
- 2587US8748292B2Methods of forming strained-semiconductor-on-insulator device structuresLANGDO THOMAS A·Filed 2005·Granted Jun 10, 2014·12 cites·20 claims
- 2687US7425751B2Method to reduce junction leakage current in strained silicon on silicon-germanium devicesAGENCY SCIENCE TECH & RES·Filed 2005·Granted Sep 16, 2008·11 cites·12 claims
- 2787US6463583B1Dynamic injection of execution logic into main dynamic link library function of the original kernel of a windowed operating systemNOVADIGM INC·Filed 1999·Granted Oct 8, 2002·137 cites·20 claims
- 2886US9601623B2Methods for forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·2 cites·20 claims
- 2985US11355617B2Self-aligned collector heterojunction bipolar transistor (HBT)QUALCOMM INC·Filed 2019·Granted Jun 7, 2022·4 cites·14 claims
- 3084US7600620B2Apparatus and method for enabling a briefcase to carry a supplemental bagHAMMOND RICHARD P·Filed 2006·Granted Oct 13, 2009·15 cites·7 claims
- 3184US7414259B2Strained germanium-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 19, 2008·4 cites·13 claims
- 3284US6680496B1Back-biasing to populate strained layer quantum wellsAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Jan 20, 2004·29 cites·26 claims
- 3383US8809835B2RF circuits including transistors having strained material layersBRAITHWAITE GLYN·Filed 2012·Granted Aug 19, 2014·5 cites·19 claims
- 3483US7846802B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 7, 2010·5 cites·26 claims
- 3583US6846720B2Method to reduce junction leakage current in strained silicon on silicon-germanium devicesAGENCY SCIENCE TECH & RES·Filed 2003·Granted Jan 25, 2005·26 cites·19 claims
- 3682US8344355B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 1, 2013·3 cites·18 claims
- 3782US6933518B2RF circuits including transistors having strained material layersAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Aug 23, 2005·20 cites·9 claims
- 3881US6846715B2Gate technology for strained surface channel and strained buried channel MOSFET devicesAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jan 25, 2005·17 cites·26 claims
- 3980US5974470ASystem for reducing conflicts among dynamic link library modules by aliasing modulesCHICAGO SOFT LTD·Filed 1997·Granted Oct 26, 1999·106 cites·21 claims
- 4079US8722495B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 13, 2014·2 cites·20 claims
- 4178US10700012B2Porous silicon dicingQUALCOMM INC·Filed 2017·Granted Jun 30, 2020·2 cites·12 claims
- 4277US9548236B2Methods of forming strained-semiconductor-on-insulator device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·2 cites·20 claims
- 4376US11355340B2Semiconductor material having tunable permittivity and tunable thermal conductivityIQE PLC·Filed 2020·Granted Jun 7, 2022·1 cites·28 claims
- 4475US6550060B1Method and system for dynamic injection of dynamic link libraries into a windowed operating systemNOVADIGM INC·Filed 1999·Granted Apr 15, 2003·62 cites·20 claims
- 4573US7884353B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 8, 2011·9 cites·49 claims
- 4672US7906776B2RF circuits including transistors having strained material layersTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Mar 15, 2011·2 cites·20 claims
- 4771US8247798B2RF circuits including transistors having strained material layersBRAITHWAITE GLYN·Filed 2011·Granted Aug 21, 2012·2 cites·20 claims
- 4868US10158030B2CMOS and bipolar device integration including a tunable capacitorQUALCOMM INC·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 4967US9847293B1Utilization of backside silicidation to form dual side contacted capacitorQUALCOMM INC·Filed 2016·Granted Dec 19, 2017·1 cites·8 claims
- 5066US10629735B2Reacted conductive gate electrodes and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·0 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →