Inventor

FITZGERALD EUGENE A

US118 patents

⚠️ This page may combine multiple inventors who share the name “FITZGERALD EUGENE A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FITZGERALD EUGENE A

AMBERWAVE SYSTEMS CORP

Strained-semiconductor-on-insulator device structures with elevated source/drain regions

Methods of forming strained-semiconductor-on-insulator finFET device structures

Strained-semiconductor-on-insulator device structures

Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits

Buried channel strained silicon FET using a supply layer created through ion implantation

Gate technology for strained surface channel and strained buried channel MOSFET devices

Buried channel strained silicon FET using a supply layer created through ion implantation

Strained-semiconductor-on-insulator finFET device structures

Heterointegration of materials using deposition and bonding

Silicon wafer with embedded optoelectronic material for monolithic OEIC

Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits

Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits

Heterointegration of materials using deposition and bonding

Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits

Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits

Semiconductor devices having strained dual channel layers

Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS

Low threading dislocation density relaxed mismatched epilayers without high temperature growth

Low threading dislocation density relaxed mismatched epilayers without high temperature growth

Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs

Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain

Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes

Strained-semiconductor-on-insulator device structures

Buried channel strained silicon FET using a supply layer created through ion implantation

Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits

Buried-channel devices and substrates for fabrication of semiconductor-based devices

Heterointegration of materials using deposition and bonding

MASSACHUSETTS INST TECHNOLOGY

Monolithically integrated light emitting devices

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

Semiconductor substrate structure

Process for producing semiconductor article using graded epitaxial growth

Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon

FinFET structure and method to make the same

Semiconductor device structure

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

Formation of planar strained layers

Etch stop layer system

Relaxed InxGa(1-x)as buffers

Process for producing semiconductor article using graded epitaxial growth

Strained gettering layers for semiconductor processes

Etch stop layer system

Monolithically integrated photodetectors

TAIWAN SEMICONDUCTOR MFG

Methods for forming semiconductor device structures

III-V semiconductor device structures

Methods for forming III-V semiconductor device structures

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

MASACHUSETTS INST OF TECHNOLOG

Process for producing semiconductor article using graded epitaxial growth

AMBERWAVE SYSTEMS CORPROATION

Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits