P

Inventor

FEILCHENFELD NATALIE B

US32 patents
⚠️ This page may combine multiple inventors who share the name “FEILCHENFELD NATALIE B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

18 patents
US7829945B2Nov 9, 2010

Lateral diffusion field effect transistor with asymmetric gate dielectric profile

IBM31 citations92
US6906401B2Jun 14, 2005

Method to fabricate high-performance NPN transistors in a BiCMOS process

IBM19 citations92
US6809024B1Oct 26, 2004

Method to fabricate high-performance NPN transistors in a BiCMOS process

IBM24 citations92
US10050115B2Aug 14, 2018

Tapered gate oxide in LDMOS devices

IBM11 citations84
US7956412B2Jun 7, 2011

Lateral diffusion field effect transistor with a trench field plate

IBM14 citations84
US8901710B2Dec 2, 2014

Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance

IBM7 citations83
US7892910B2Feb 22, 2011

Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration

IBM7 citations83
US7301752B2Nov 27, 2007

Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask

IBM10 citations82
US4883744ANov 28, 1989

Forming a polymide pattern on a substrate

IBM14 citations72
US9059276B2Jun 16, 2015

High voltage laterally diffused metal oxide semiconductor

IBM3 citations63
US7886240B2Feb 8, 2011

Modifying layout of IC based on function of interconnect and related circuit and design structure

IBM3 citations63
US7728372B2Jun 1, 2010

Method and structure for creation of a metal insulator metal capacitor

IBM3 citations62
US5489500AFeb 6, 1996

Flexible strip structure for a parallel processor and method of fabricating the flexible strip

IBM6 citations56
US9947573B2Apr 17, 2018

Lateral PiN diodes and schottky diodes

IBM0 citations52
US8796108B2Aug 5, 2014

Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode

IBM0 citations52
US7868423B2Jan 11, 2011

Optimized device isolation

IBM1 citations51
US7511940B2Mar 31, 2009

Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask

IBM0 citations50
US9202869B2Dec 1, 2015

Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures

IBM0 citations42

GLOBALFOUNDRIES INC

8 patents

FEILCHENFELD NATALIE B

4 patents

ANDERSON FREDERICK G

1 patent

ESHUN EBENEZER E

1 patent