Inventor
FEILCHENFELD NATALIE B
US32 patents
⚠️ This page may combine multiple inventors who share the name “FEILCHENFELD NATALIE B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
18 patentsUS7829945B2Nov 9, 2010
Lateral diffusion field effect transistor with asymmetric gate dielectric profile
IBM31 citations92
US6906401B2Jun 14, 2005
Method to fabricate high-performance NPN transistors in a BiCMOS process
IBM19 citations92
US6809024B1Oct 26, 2004
Method to fabricate high-performance NPN transistors in a BiCMOS process
IBM24 citations92
US10050115B2Aug 14, 2018
Tapered gate oxide in LDMOS devices
IBM11 citations84
US7956412B2Jun 7, 2011
Lateral diffusion field effect transistor with a trench field plate
IBM14 citations84
US8901710B2Dec 2, 2014
Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance
IBM7 citations83
US7892910B2Feb 22, 2011
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
IBM7 citations83
US7301752B2Nov 27, 2007
Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask
IBM10 citations82
US4883744ANov 28, 1989
Forming a polymide pattern on a substrate
IBM14 citations72
US9059276B2Jun 16, 2015
High voltage laterally diffused metal oxide semiconductor
IBM3 citations63
US7886240B2Feb 8, 2011
Modifying layout of IC based on function of interconnect and related circuit and design structure
IBM3 citations63
US7728372B2Jun 1, 2010
Method and structure for creation of a metal insulator metal capacitor
IBM3 citations62
US5489500AFeb 6, 1996
Flexible strip structure for a parallel processor and method of fabricating the flexible strip
IBM6 citations56
US9947573B2Apr 17, 2018
Lateral PiN diodes and schottky diodes
IBM0 citations52
US8796108B2Aug 5, 2014
Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode
IBM0 citations52
US7868423B2Jan 11, 2011
Optimized device isolation
IBM1 citations51
US7511940B2Mar 31, 2009
Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask
IBM0 citations50
US9202869B2Dec 1, 2015
Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures
IBM0 citations42
GLOBALFOUNDRIES INC
8 patentsUS9786606B2Oct 10, 2017
Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method
GLOBALFOUNDRIES INC9 citations82
US10535551B2Jan 14, 2020
Lateral PiN diodes and schottky diodes
GLOBALFOUNDRIES INC4 citations73
US10446644B2Oct 15, 2019
Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer
GLOBALFOUNDRIES INC2 citations73
US9799652B1Oct 24, 2017
Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
GLOBALFOUNDRIES INC3 citations73
US9768028B1Sep 19, 2017
Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
GLOBALFOUNDRIES INC2 citations73
US9893157B1Feb 13, 2018
Structures with contact trenches and isolation trenches
GLOBALFOUNDRIES INC4 citations71
US9595579B2Mar 14, 2017
Dual shallow trench isolation (STI) structure for field effect transistor (FET)
GLOBALFOUNDRIES INC0 citations52
US9324632B2Apr 26, 2016
Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method
GLOBALFOUNDRIES INC1 citations50
FEILCHENFELD NATALIE B
4 patentsUS8236662B2Aug 7, 2012
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
FEILCHENFELD NATALIE B3 citations60
US8946013B2Feb 3, 2015
Lateral diffusion field effect transistor with drain region self-aligned to gate electrode
FEILCHENFELD NATALIE B0 citations51
US8114750B2Feb 14, 2012
Lateral diffusion field effect transistor with drain region self-aligned to gate electrode
FEILCHENFELD NATALIE B1 citations51
US8525293B2Sep 3, 2013
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
FEILCHENFELD NATALIE B0 citations50