Inventor · disambiguated record
Georg Brenninger
Also filed as: BRENNINGER GEORG
12 granted patents·1 pending application·55 citations·filing 1998–2016
86Inventor score
Top patents by PatentIndex Score
13 records- 0173US8283262B2Method for depositing a layer on a semiconductor wafer by means of CVD and chamber for carrying out the methodBRENNINGER GEORG·Filed 2009·Granted Oct 9, 2012·3 cites·4 claims
- 0266US6217212B1Method and device for detecting an incorrect position of a semiconductor waferWACKER SILTRONIC HALBLEITERMAT·Filed 1998·Granted Apr 17, 2001·41 cites·5 claims
- 0364US10240235B2Method and apparatus for depositing a material layer originating from process gas on a substrate waferBRENNINGER GEORG·Filed 2012·Granted Mar 26, 2019·2 cites·16 claims
- 0464US8357549B2Method for identifying an incorrect position of a semiconductor wafer during a thermal treatmentSILTRONIC AG·Filed 2010·Granted Jan 22, 2013·3 cites·11 claims
- 0563US8268708B2Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafersHABERECHT JOERG·Filed 2010·Granted Sep 18, 2012·2 cites·19 claims
- 0651US9410262B2Method for producing a silicon single crystalSILTRONIC AG·Filed 2013·Granted Aug 9, 2016·0 cites·17 claims
- 0751US9018021B2Method and apparatus for depositing a layer on a semiconductor wafer by vapor deposition in a process chamberBRENNINGER GEORG·Filed 2012·Granted Apr 28, 2015·0 cites·8 claims
- 0846US6435797B1Method and device for loading a susceptorWACKER SILTRONIC HALBLEITERMAT·Filed 2000·Granted Aug 20, 2002·4 cites·14 claims
- 0945US9828693B2Apparatus and process for producing a crystal of semiconductor materialSILTRONIC AG·Filed 2015·Granted Nov 28, 2017·0 cites·20 claims
- 1043US9153472B2Device for depositing a layer on a semiconductor wafer by means of vapour depositionSILTRONIC AG·Filed 2013·Granted Oct 6, 2015·0 cites·6 claims
- 1142US2018194633A1Method for the thermal treatment of granular material composed of silicon, granular material composed of silicon, and method for producing a monocrystal composed of siliconSILTRONIC AG·Filed 2016·Application pending·0 cites
- 1236US9828692B2Apparatus and process for producing a single crystal of siliconSILTRONIC AG·Filed 2015·Granted Nov 28, 2017·0 cites·12 claims
- 1332US6869481B2Method and device for regulating the differential pressure in epitaxy reactorsSILTRONIC AG·Filed 2002·Granted Mar 22, 2005·0 cites·10 claims
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