Inventor
SEO BO-YOUNG
KR27 patents
⚠️ This page may combine multiple inventors who share the name “SEO BO-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7285820B2Oct 23, 2007
Flash memory device using semiconductor fin and method thereof
SAMSUNG ELECTRONICS CO LTD263 citations99
US7339232B2Mar 4, 2008
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US9082865B2Jul 14, 2015
Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7553725B2Jun 30, 2009
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7408230B2Aug 5, 2008
EEPROM device having first and second doped regions that increase an effective channel length
SAMSUNG ELECTRONICS CO LTD10 citations84
US9805444B2Oct 31, 2017
Magnetic random access memory (MRAM)-based frame buffering apparatus, display driving apparatus and display apparatus including the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US7697336B2Apr 13, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations71
US7521750B2Apr 21, 2009
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7515468B2Apr 7, 2009
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7190024B2Mar 13, 2007
Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
SAMSUNG ELECTRONICS CO LTD2 citations63
US8913430B2Dec 16, 2014
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US7602008B2Oct 13, 2009
Split gate non-volatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7320913B2Jan 22, 2008
Methods of forming split-gate non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US7512003B2Mar 31, 2009
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations61
US7041557B2May 9, 2006
Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
SAMSUNG ELECTRONICS CO LTD0 citations52
US7696561B2Apr 13, 2010
Non-volatile memory device, method of manufacturing the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations50
SEO BO-YOUNG
5 patentsUS9691459B2Jun 27, 2017
Semiconductor memory device including shorted variable resistor element of memory cell
SEO BO-YOUNG5 citations72
US9330745B2May 3, 2016
Magnetic memory devices including magnetic memory cells having opposite magnetization directions
SEO BO-YOUNG2 citations62
US8111553B2Feb 7, 2012
Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the same
SEO BO-YOUNG3 citations61
US9318181B2Apr 19, 2016
Magnetic memory devices including shared lines
SEO BO-YOUNG1 citations51
US8921816B2Dec 30, 2014
Semiconductor device having a diode
SEO BO-YOUNG0 citations47
SEO BO YOUNG
2 patentsUS10453801B2Oct 22, 2019
Semiconductor devices and semiconductor packages including magnetic shielding layers and methods of manufacturing semiconductor devices and semiconductor packages
SEO BO YOUNG3 citations72
US9928892B2Mar 27, 2018
Memory apparatuses having ground switches
SEO BO YOUNG4 citations72