Inventor · disambiguated record
Chul-Soon Kwon
Also filed as: KWON CHUL · KWON CHUL-SOON
18 granted patents·6 pending applications·261 citations·filing 1997–2011
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD18JEONG YOUNG-CHEON1KOOKMIN CREDIT CARD CO LTD1KWON YONG-WOOK1MOON JUNG-HO1
Top patents by PatentIndex Score
24 records- 0190US5899740AMethods of fabricating copper interconnects for integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 4, 1999·115 cites·21 claims
- 0287US6853028B2Non-volatile memory device having dummy patternSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 8, 2005·35 cites·14 claims
- 0383US6705518B2System and method for providing tourism service using RF IC card, and storage medium for storing tourism service algorithm thereofKOOKMIN CREDIT CARD CO LTD·Filed 2001·Granted Mar 16, 2004·45 cites·38 claims
- 0481US7956343B2Nonvolatile memory devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 7, 2011·12 cites·21 claims
- 0563US6800525B2Method of manufacturing split gate flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 5, 2004·10 cites·13 claims
- 0662US7553726B2Method of fabricating nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·3 cites·20 claims
- 0756US7560765B2Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·1 cites·4 claims
- 0856US6974748B2Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 13, 2005·5 cites·10 claims
- 0954US6140174AMethods of forming wiring layers on integrated circuits including regions of high and low topographySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 31, 2000·16 cites·16 claims
- 1053US7205194B2Method of fabricating a flash memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·6 cites·20 claims
- 1153US7115470B2Methods of fabricating flash memory cell having split-gate structure using spacer oxidation processSAMSUNG ELECTRONICS LTD CO·Filed 2004·Granted Oct 3, 2006·8 cites·20 claims
- 1250US2007200165A1Floating gate, a nonvolatile memory device including the floating gate and method of fabricating the sameJEONG YOUNG-CHEON·Filed 2007·Application pending·0 cites
- 1348US7375391B2Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·0 cites·18 claims
- 1448US7195933B2Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·0 cites·22 claims
- 1547US7564092B2Flash memory device having a split gateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·0 cites·10 claims
- 1646US6977200B2Method of manufacturing split-gate memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 20, 2005·3 cites·20 claims
- 1746US2007252190A1Nonvolatile memory device and method for manufacturing the samePARK JAE-HYUN·Filed 2007·Application pending·0 cites
- 1843US7094646B2Flash memory device having a split gate and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 22, 2006·0 cites·22 claims
- 1943US7081380B2Method of forming a conductive pattern of a semiconductor device and method of manufacturing a non-volatile semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·2 cites·20 claims
- 2043US6924505B2Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring patternSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 2, 2005·0 cites·18 claims
- 2140US2011207265A1Nonvolatile memory devices and method of manufacturing the sameKWON YONG-WOOK·Filed 2011·Application pending·0 cites
- 2238US2008050875A1Methods of fabricating embedded flash memory devicesMOON JUNG-HO·Filed 2006·Application pending·0 cites
- 2337US2007042539A1Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2437US2006001077A1Split gate type flash memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
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