Inventor
JEON JUN-YOUNG
KR32 patents
⚠️ This page may combine multiple inventors who share the name “JEON JUN-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUSD432096SOct 17, 2000
Semiconductor module
SAMSUNG ELECTRONICS CO LTD48 citations96
US5373476ADec 13, 1994
Highly integrated semiconductor memory device with triple well structure
SAMSUNG ELECTRONICS CO LTD59 citations96
US5343088AAug 30, 1994
Charge pump circuit for a substrate voltage generator of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD64 citations96
US6768660B2Jul 27, 2004
Multi-chip memory devices and modules including independent control of memory chips
SAMSUNG ELECTRONICS CO LTD76 citations93
US6094382AJul 25, 2000
Integrated circuit memory devices with improved layout of fuse boxes and buses
SAMSUNG ELECTRONICS CO LTD40 citations93
USD432097SOct 17, 2000
Semiconductor package
SAMSUNG ELECTRONICS CO LTD42 citations92
US6069812AMay 30, 2000
Integrated circuit memory devices including rows of pads extending parallel to the short sides of the integrated circuit
SAMSUNG ELECTRONICS CO LTD22 citations92
US6026047AFeb 15, 2000
Integrated circuit memory device with hierarchical work line structure
SAMSUNG ELECTRONICS CO LTD39 citations92
US5952871ASep 14, 1999
Substrate voltage generating circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD28 citations92
US5838189ANov 17, 1998
Substrate voltage generating circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD42 citations92
US5812483ASep 22, 1998
Integrated circuit memory devices including split word lines and predecoders and related methods
SAMSUNG ELECTRONICS CO LTD32 citations92
US5747974AMay 5, 1998
Internal supply voltage generating circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD35 citations92
US5341331AAug 23, 1994
Data transmission circuit having common input/output lines
SAMSUNG ELECTRONICS CO LTD35 citations92
US6212121B1Apr 3, 2001
Semiconductor memory device with multiple sub-arrays of different sizes
SAMSUNG ELECTRONICS CO LTD31 citations91
US5278797AJan 11, 1994
Semiconductor memory device capable of executing non-periodic refreshing operations
SAMSUNG ELECTRONICS CO LTD33 citations91
US5455192AOct 3, 1995
Method of making dynamic random access memory cell having a stacked capacitor and a trench capacitor
SAMSUNG ELECTRONICS CO LTD17 citations82
US6303970B1Oct 16, 2001
Semiconductor device with a plurality of fuses
SAMSUNG ELECTRONICS CO LTD11 citations74
US6274931B1Aug 14, 2001
Integrated circuit packaging systems and methods that use the same packaging substrates for integrated circuits of different data path widths
SAMSUNG ELECTRONICS CO LTD7 citations74
US6147924ANov 14, 2000
Arrangement of data input/output circuits for use in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD9 citations74
US5479093ADec 26, 1995
Internal voltage generating circuit of a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations74
US5027172AJun 25, 1991
Dynamic random access memory cell and method of making thereof
SAMSUNG ELECTRONICS CO LTD14 citations74
US5748550AMay 5, 1998
Multiple power line arrangement for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations71
US5701072ADec 23, 1997
Integrated circuit output driver systems including multiple power and ground lines
SAMSUNG ELECTRONICS CO LTD11 citations71
US6219297B1Apr 17, 2001
Dynamic random access memory that can be controlled by a controller for a less integrated dynamic random access memory
SAMSUNG ELECTRONICS CO LTD10 citations66
US5930191AJul 27, 1999
Semiconductor memory device having a plurality of power voltages
SAMSUNG ELECTRONICS CO LTD5 citations63
US5930166AJul 27, 1999
Semiconductor memory device with triple metal layer
SAMSUNG ELECTRONICS CO LTD4 citations63
US5850363ADec 15, 1998
Voltage boosting circuit having dual precharge circuits in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US5374839ADec 20, 1994
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US6573611B1Jun 3, 2003
Dual-lead type square semiconductor package and dual in-line memory module using the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US6118722ASep 12, 2000
Integrated circuit memory device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7173871B2Feb 6, 2007
Semiconductor memory device and method of outputting data strobe signal thereof
SAMSUNG ELECTRONICS CO LTD2 citations60