P

Inventor

JEON JUN-YOUNG

KR32 patents
⚠️ This page may combine multiple inventors who share the name “JEON JUN-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
USD432096SOct 17, 2000

Semiconductor module

SAMSUNG ELECTRONICS CO LTD48 citations96
US5373476ADec 13, 1994

Highly integrated semiconductor memory device with triple well structure

SAMSUNG ELECTRONICS CO LTD59 citations96
US5343088AAug 30, 1994

Charge pump circuit for a substrate voltage generator of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD64 citations96
US6768660B2Jul 27, 2004

Multi-chip memory devices and modules including independent control of memory chips

SAMSUNG ELECTRONICS CO LTD76 citations93
US6094382AJul 25, 2000

Integrated circuit memory devices with improved layout of fuse boxes and buses

SAMSUNG ELECTRONICS CO LTD40 citations93
USD432097SOct 17, 2000

Semiconductor package

SAMSUNG ELECTRONICS CO LTD42 citations92
US6069812AMay 30, 2000

Integrated circuit memory devices including rows of pads extending parallel to the short sides of the integrated circuit

SAMSUNG ELECTRONICS CO LTD22 citations92
US6026047AFeb 15, 2000

Integrated circuit memory device with hierarchical work line structure

SAMSUNG ELECTRONICS CO LTD39 citations92
US5952871ASep 14, 1999

Substrate voltage generating circuit of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD28 citations92
US5838189ANov 17, 1998

Substrate voltage generating circuit of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD42 citations92
US5812483ASep 22, 1998

Integrated circuit memory devices including split word lines and predecoders and related methods

SAMSUNG ELECTRONICS CO LTD32 citations92
US5747974AMay 5, 1998

Internal supply voltage generating circuit for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD35 citations92
US5341331AAug 23, 1994

Data transmission circuit having common input/output lines

SAMSUNG ELECTRONICS CO LTD35 citations92
US6212121B1Apr 3, 2001

Semiconductor memory device with multiple sub-arrays of different sizes

SAMSUNG ELECTRONICS CO LTD31 citations91
US5278797AJan 11, 1994

Semiconductor memory device capable of executing non-periodic refreshing operations

SAMSUNG ELECTRONICS CO LTD33 citations91
US5455192AOct 3, 1995

Method of making dynamic random access memory cell having a stacked capacitor and a trench capacitor

SAMSUNG ELECTRONICS CO LTD17 citations82
US6303970B1Oct 16, 2001

Semiconductor device with a plurality of fuses

SAMSUNG ELECTRONICS CO LTD11 citations74
US6274931B1Aug 14, 2001

Integrated circuit packaging systems and methods that use the same packaging substrates for integrated circuits of different data path widths

SAMSUNG ELECTRONICS CO LTD7 citations74
US6147924ANov 14, 2000

Arrangement of data input/output circuits for use in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD9 citations74
US5479093ADec 26, 1995

Internal voltage generating circuit of a semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations74
US5027172AJun 25, 1991

Dynamic random access memory cell and method of making thereof

SAMSUNG ELECTRONICS CO LTD14 citations74
US5748550AMay 5, 1998

Multiple power line arrangement for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations71
US5701072ADec 23, 1997

Integrated circuit output driver systems including multiple power and ground lines

SAMSUNG ELECTRONICS CO LTD11 citations71
US6219297B1Apr 17, 2001

Dynamic random access memory that can be controlled by a controller for a less integrated dynamic random access memory

SAMSUNG ELECTRONICS CO LTD10 citations66
US5930191AJul 27, 1999

Semiconductor memory device having a plurality of power voltages

SAMSUNG ELECTRONICS CO LTD5 citations63
US5930166AJul 27, 1999

Semiconductor memory device with triple metal layer

SAMSUNG ELECTRONICS CO LTD4 citations63
US5850363ADec 15, 1998

Voltage boosting circuit having dual precharge circuits in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations63
US5374839ADec 20, 1994

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US6573611B1Jun 3, 2003

Dual-lead type square semiconductor package and dual in-line memory module using the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US6118722ASep 12, 2000

Integrated circuit memory device

SAMSUNG ELECTRONICS CO LTD5 citations62
US7173871B2Feb 6, 2007

Semiconductor memory device and method of outputting data strobe signal thereof

SAMSUNG ELECTRONICS CO LTD2 citations60

JEON JUN YOUNG

1 patent