Inventor
JUNG DONG HA
KR55 patents
⚠️ This page may combine multiple inventors who share the name “JUNG DONG HA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
17 patentsUS7741216B2Jun 22, 2010
Metal line of semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC10 citations84
US7872351B2Jan 18, 2011
Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same
HYNIX SEMICONDUCTOR INC6 citations74
US7977793B2Jul 12, 2011
Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same
HYNIX SEMICONDUCTOR INC3 citations63
US7902065B2Mar 8, 2011
Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations63
US7855456B2Dec 21, 2010
Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations63
US7820546B2Oct 26, 2010
Method for manufacturing semiconductor device preventing loss of junction region
HYNIX SEMICONDUCTOR INC2 citations63
US7777336B2Aug 17, 2010
Metal line of semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations63
US7629248B2Dec 8, 2009
Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same
HYNIX SEMICONDUCTOR INC4 citations63
US7531902B2May 12, 2009
Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations63
US8043962B2Oct 25, 2011
Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same
HYNIX SEMICONDUCTOR INC4 citations62
US7875978B2Jan 25, 2011
Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations62
US8053895B2Nov 8, 2011
Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
US8008774B2Aug 30, 2011
Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
US8008708B2Aug 30, 2011
Metal line of semiconductor device having a diffusion barrier and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
US7875979B2Jan 25, 2011
Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
US7638425B2Dec 29, 2009
Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
US7524761B2Apr 28, 2009
Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance
HYNIX SEMICONDUCTOR INC0 citations51
AVALANCHE TECHNOLOGY INC
10 patentsUS9166154B2Oct 20, 2015
MTJ stack and bottom electrode patterning process with ion beam etching using a single mask
AVALANCHE TECHNOLOGY INC47 citations94
US9070869B2Jun 30, 2015
Fabrication method for high-density MRAM using thin hard mask
AVALANCHE TECHNOLOGY INC29 citations94
US8975089B1Mar 10, 2015
Method for forming MTJ memory element
AVALANCHE TECHNOLOGY INC40 citations94
US8962349B1Feb 24, 2015
Method of manufacturing magnetic tunnel junction memory element
AVALANCHE TECHNOLOGY INC38 citations94
US9029822B2May 12, 2015
High density resistive memory having a vertical dual channel transistor
AVALANCHE TECHNOLOGY INC9 citations84
US10217934B2Feb 26, 2019
Method for manufacturing magnetic memory cells
AVALANCHE TECHNOLOGY INC4 citations73
US10177308B2Jan 8, 2019
Method for manufacturing magnetic memory cells
AVALANCHE TECHNOLOGY INC4 citations73
US9548448B1Jan 17, 2017
Memory device with increased separation between memory elements
AVALANCHE TECHNOLOGY INC2 citations73
US9123575B1Sep 1, 2015
Semiconductor memory device having increased separation between memory elements
AVALANCHE TECHNOLOGY INC5 citations73
US8836061B2Sep 16, 2014
Magnetic tunnel junction with non-metallic layer adjacent to free layer
AVALANCHE TECHNOLOGY INC5 citations73
SAMSUNG ELECTRONICS CO LTD
10 patentsUS10501881B2Dec 10, 2019
Damping device and washing machine including the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11242635B2Feb 8, 2022
Drum washing machine
SAMSUNG ELECTRONICS CO LTD1 citations62
US10995444B2May 4, 2021
Washing machine
SAMSUNG ELECTRONICS CO LTD0 citations61
US11427949B2Aug 30, 2022
Washing machine
SAMSUNG ELECTRONICS CO LTD0 citations59
US9994988B2Jun 12, 2018
Balancer of washing machine
SAMSUNG ELECTRONICS CO LTD0 citations52
US9637854B2May 2, 2017
Washing machine with balancer and control method thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US10760195B2Sep 1, 2020
Washing machine
SAMSUNG ELECTRONICS CO LTD0 citations49
US9803308B2Oct 31, 2017
Balancer and washing machine having the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US9765466B2Sep 19, 2017
Balancer and washing machine having the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US9719202B2Aug 1, 2017
Balancer and washing machine having the same
SAMSUNG ELECTRONICS CO LTD0 citations42
JUNG DONG HA
4 patentsUS8772888B2Jul 8, 2014
MTJ MRAM with stud patterning
JUNG DONG HA224 citations98
US8338951B2Dec 25, 2012
Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same
JUNG DONG HA3 citations62
US8685757B2Apr 1, 2014
Method for fabricating magnetic tunnel junction
JUNG DONG HA2 citations51
US8519539B2Aug 27, 2013
Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same
JUNG DONG HA1 citations50
SK HYNIX INC
4 patentsUS12073217B2Aug 27, 2024
Memory system and data processing system including the same
SK HYNIX INC0 citations62
US11544063B2Jan 3, 2023
Memory system and data processing system including the same
SK HYNIX INC1 citations62
US10963395B2Mar 30, 2021
Memory system
SK HYNIX INC0 citations52
US10635517B2Apr 28, 2020
Semiconductor devices comparing error codes and semiconductor systems including the same
SK HYNIX INC0 citations42
SATOH KIMIHIRO
2 patentsOH JOON SEOK
1 patentJUNG DONG-HA
1 patentKIM BAEK MANN
1 patentShowing the top 50 of 55 patents by PatentIndex Score.