P

Inventor

JUNG DONG HA

KR55 patents
⚠️ This page may combine multiple inventors who share the name “JUNG DONG HA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HYNIX SEMICONDUCTOR INC

17 patents
US7741216B2Jun 22, 2010

Metal line of semiconductor device and method for forming the same

HYNIX SEMICONDUCTOR INC10 citations84
US7872351B2Jan 18, 2011

Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same

HYNIX SEMICONDUCTOR INC6 citations74
US7977793B2Jul 12, 2011

Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same

HYNIX SEMICONDUCTOR INC3 citations63
US7902065B2Mar 8, 2011

Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the same

HYNIX SEMICONDUCTOR INC2 citations63
US7855456B2Dec 21, 2010

Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same

HYNIX SEMICONDUCTOR INC2 citations63
US7820546B2Oct 26, 2010

Method for manufacturing semiconductor device preventing loss of junction region

HYNIX SEMICONDUCTOR INC2 citations63
US7777336B2Aug 17, 2010

Metal line of semiconductor device and method for forming the same

HYNIX SEMICONDUCTOR INC2 citations63
US7629248B2Dec 8, 2009

Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same

HYNIX SEMICONDUCTOR INC4 citations63
US7531902B2May 12, 2009

Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same

HYNIX SEMICONDUCTOR INC2 citations63
US8043962B2Oct 25, 2011

Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same

HYNIX SEMICONDUCTOR INC4 citations62
US7875978B2Jan 25, 2011

Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same

HYNIX SEMICONDUCTOR INC2 citations62
US8053895B2Nov 8, 2011

Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same

HYNIX SEMICONDUCTOR INC0 citations52
US8008774B2Aug 30, 2011

Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same

HYNIX SEMICONDUCTOR INC0 citations52
US8008708B2Aug 30, 2011

Metal line of semiconductor device having a diffusion barrier and method for forming the same

HYNIX SEMICONDUCTOR INC0 citations52
US7875979B2Jan 25, 2011

Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same

HYNIX SEMICONDUCTOR INC0 citations52
US7638425B2Dec 29, 2009

Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same

HYNIX SEMICONDUCTOR INC0 citations52
US7524761B2Apr 28, 2009

Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance

HYNIX SEMICONDUCTOR INC0 citations51

AVALANCHE TECHNOLOGY INC

10 patents

SAMSUNG ELECTRONICS CO LTD

10 patents

JUNG DONG HA

4 patents

SK HYNIX INC

4 patents

SATOH KIMIHIRO

2 patents

OH JOON SEOK

1 patent

JUNG DONG-HA

1 patent

KIM BAEK MANN

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.