P

Inventor

ANDERSON BRENT A

US488 patents
⚠️ This page may combine multiple inventors who share the name “ANDERSON BRENT A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

44 patents
US9299835B1Mar 29, 2016

Vertical field effect transistors

IBM141 citations99
US7411252B2Aug 12, 2008

Substrate backgate for trigate FET

IBM156 citations99
US7259420B2Aug 21, 2007

Multiple-gate device with floating back gate

IBM249 citations99
US7101763B1Sep 5, 2006

Low capacitance junction-isolation for bulk FinFET technology

IBM560 citations99
US7091551B1Aug 15, 2006

Four-bit FinFET NVRAM memory device

IBM163 citations99
US6949768B1Sep 27, 2005

Planar substrate devices integrated with finfets and method of manufacture

IBM136 citations99
US6867460B1Mar 15, 2005

FinFET SRAM cell with chevron FinFET logic

IBM214 citations99
US9680473B1Jun 13, 2017

Ultra dense vertical transport FET circuits

IBM79 citations98
US9431305B1Aug 30, 2016

Vertical transistor fabrication and devices

IBM57 citations98
US9087897B1Jul 21, 2015

Semiconductor structures with pair(s) of vertical field effect transistors, each pair having a shared source/drain region and methods of forming the structures

IBM55 citations98
US7960791B2Jun 14, 2011

Dense pitch bulk FinFET process by selective EPI and etch

IBM76 citations98
US7851865B2Dec 14, 2010

Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure

IBM102 citations98
US7732859B2Jun 8, 2010

Graphene-based transistor

IBM91 citations98
US7692254B2Apr 6, 2010

Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure

IBM83 citations98
US7456471B2Nov 25, 2008

Field effect transistor with raised source/drain fin straps

IBM85 citations98
US7105934B2Sep 12, 2006

FinFET with low gate capacitance and low extrinsic resistance

IBM74 citations98
US6998684B2Feb 14, 2006

High mobility plane CMOS SOI

IBM149 citations98
US7183142B2Feb 27, 2007

FinFETs with long gate length at high density

IBM58 citations96
US10319629B1Jun 11, 2019

Skip via for metal interconnects

IBM25 citations94
US10297668B1May 21, 2019

Vertical transport fin field effect transistor with asymmetric channel profile

IBM18 citations94
US10020223B1Jul 10, 2018

Reduced tip-to-tip and via pitch at line end

IBM30 citations94
US9859898B1Jan 2, 2018

High density vertical field effect transistor multiplexer

IBM23 citations94
US9842931B1Dec 12, 2017

Self-aligned shallow trench isolation and doping for vertical fin transistors

IBM33 citations94
US9805935B2Oct 31, 2017

Bottom source/drain silicidation for vertical field-effect transistor (FET)

IBM27 citations94
US9761712B1Sep 12, 2017

Vertical transistors with merged active area regions

IBM26 citations94
US9373641B2Jun 21, 2016

Methods of forming field effect transistors using a gate cut process following final gate formation

IBM28 citations94
US10074570B2Sep 11, 2018

3D vertical FET with top and bottom gate contacts

IBM16 citations93
US9853127B1Dec 26, 2017

Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process

IBM18 citations93
US9653360B2May 16, 2017

Vertical field effect transistors

IBM9 citations93
US9613955B1Apr 4, 2017

Hybrid circuit including a tunnel field-effect transistor

IBM23 citations93
US9570357B2Feb 14, 2017

Vertical field effect transistors

IBM17 citations93
US9502407B1Nov 22, 2016

Integrating a planar field effect transistor (FET) with a vertical FET

IBM13 citations93
US9263442B2Feb 16, 2016

Replacement gate structures and methods of manufacturing

IBM17 citations93
US9064943B1Jun 23, 2015

Gate-all-around field effect transistor structures and methods

IBM26 citations93
US8022478B2Sep 20, 2011

Method of forming a multi-fin multi-gate field effect transistor with tailored drive current

IBM32 citations93
US7952088B2May 31, 2011

Semiconducting device having graphene channel

IBM34 citations93
US7888750B2Feb 15, 2011

Multi-fin multi-gate field effect transistor with tailored drive current

IBM20 citations93
US7871876B2Jan 18, 2011

Method of forming a dual-plane complementary metal oxide semiconductor

IBM17 citations93
US7851283B2Dec 14, 2010

Field effect transistor with raised source/drain fin straps

IBM16 citations93
US7671442B2Mar 2, 2010

Air-gap insulated interconnections

IBM19 citations93
US7569897B2Aug 4, 2009

Low-capacitance contact for long gate-length devices with small contacted pitch

IBM15 citations93
US7547947B2Jun 16, 2009

SRAM cell

IBM34 citations93
US7537985B2May 26, 2009

Double gate isolation

IBM15 citations93
US7368354B2May 6, 2008

Planar substrate devices integrated with FinFETs and method of manufacture

IBM33 citations93

ANDERSON BRENT A

4 patents

GLOBALFOUNDRIES INC

1 patent

MARS INC

1 patent

Showing the top 50 of 488 patents by PatentIndex Score.