Inventor
HWANG IN SEAK
KR41 patents
⚠️ This page may combine multiple inventors who share the name “HWANG IN SEAK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS6717231B2Apr 6, 2004
Trench isolation regions having recess-inhibiting layers therein that protect against overetching
SAMSUNG ELECTRONICS CO LTD52 citations95
US6461937B1Oct 8, 2002
Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching
SAMSUNG ELECTRONICS CO LTD78 citations95
US6500726B2Dec 31, 2002
Shallow trench isolation type semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD44 citations94
US6700153B2Mar 2, 2004
One-cylinder stack capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD32 citations93
US6889447B2May 10, 2005
Method for drying a wafer and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD29 citations92
US6802911B2Oct 12, 2004
Method for cleaning damaged layers and polymer residue from semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations92
US6548853B1Apr 15, 2003
Cylindrical capacitors having a stepped sidewall and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD50 citations92
US6146994ANov 14, 2000
Method for forming self-aligned selective silicide layer using chemical mechanical polishing in merged DRAM logic
SAMSUNG ELECTRONICS CO LTD28 citations92
US6331478B1Dec 18, 2001
Methods for manufacturing semiconductor devices having chamfered metal silicide layers
SAMSUNG ELECTRONICS CO LTD25 citations89
US6911364B2Jun 28, 2005
One-cylinder stack capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US9659940B2May 23, 2017
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US9269720B1Feb 23, 2016
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD11 citations82
US6369008B1Apr 9, 2002
Cleaning solutions for removing contaminants from the surfaces of semiconductor substrates and cleaning methods using the same
SAMSUNG ELECTRONICS CO LTD17 citations82
US7573132B2Aug 11, 2009
Wiring structure of a semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6875706B2Apr 5, 2005
Cleaning solution and method of cleaning a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD10 citations73
US6699773B2Mar 2, 2004
Shallow trench isolation type semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD10 citations72
US10109529B2Oct 23, 2018
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US9390961B2Jul 12, 2016
Semiconductor devices having plug insulators
SAMSUNG ELECTRONICS CO LTD4 citations68
US6838330B2Jan 4, 2005
Method of forming a contact hole of a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations66
US7338610B2Mar 4, 2008
Etching method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US10438799B2Oct 8, 2019
Methods of fabricating semiconductor devices including support patterns
SAMSUNG ELECTRONICS CO LTD1 citations62
US7025493B2Apr 11, 2006
Chemical supply system and chemical mixing apparatus
SAMSUNG ELECTRONICS CO LTD2 citations62
US6943081B2Sep 13, 2005
Method of forming storage nodes comprising a base in a contact hole and related structures
SAMSUNG ELECTRONICS CO LTD2 citations62
US6706633B2Mar 16, 2004
Method of forming a self-aligned contact pad for use in a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations62
US6831012B2Dec 14, 2004
Method for forming a silicide film of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations61
US8962455B2Feb 24, 2015
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations60
US9985106B2May 29, 2018
Semiconductor devices utilizing spacer structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US7361547B2Apr 22, 2008
Method for forming a capacitor for use in a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US6837943B2Jan 4, 2005
Method and apparatus for cleaning a semiconductor substrate
SAMSUNG ELECTRONICS CO LTD1 citations52
US7405164B2Jul 29, 2008
Apparatus and method for removing a photoresist structure from a substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US7008755B2Mar 7, 2006
Method for forming a planarized layer of a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US6946431B2Sep 20, 2005
Cleaning solution including aqueous ammonia solution, acetic acid and deionized water for integrated circuit devices and methods of cleaning integrated circuit devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9960169B2May 1, 2018
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations42