US6837943B2ExpiredUtilityA1

Method and apparatus for cleaning a semiconductor substrate

47
Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Dec 17, 2002Filed: Dec 17, 2002Granted: Jan 4, 2005
Est. expiryDec 17, 2022(expired)· nominal 20-yr term from priority
H10P 72/0414H10P 50/287H10P 70/273H10P 52/00G03F 7/425Y10S134/902
47
PatentIndex Score
1
Cited by
9
References
29
Claims

Abstract

A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Claims

exact text as granted — not AI-modified
1. A method of removing a targeted substance from a substrate which includes a conductive pattern located at a surface of the substrate, the substance being located adjacent the conductive pattern, said method comprising:
 a chemical treatment comprising supplying a stripping solution to the surface of the substrate, the stripping solution having an ability to remove the targeted substance and which ability is enhanced when the stripping solution is heated,  
 while the stripping solution is on the surface of the substrate, inducing a current in the conductive pattern by exposing the substrate to an alternating magnetic flux to thereby heat the conductive pattern, such that the stripping solution adjacent the conductive pattern is heated, and  
 maintaining the heated stripping solution on the surface of the substrate for a period of time sufficient for the heated stripping solution to remove at least some of the targeted substance from adjacent the conductive pattern; and  
 a subsequent cleaning process of removing the stripping solution from the substrate.  
 
     
     
       2. The method as claimed in  claim 1 , further comprising rotating the substrate to distribute the stripping solution across the surface of the substrate. 
     
     
       3. The method as claimed in  claim 1 , wherein the stripping solution is removed by applying a rinsing solution to the substrate. 
     
     
       4. The method as claimed in  claim 3 , further comprising rotating the substrate during or after application of the rinsing solution. 
     
     
       5. The method as claimed in  claim 3 , further comprising rotating the substrate to dry the substrate after said application of the rinsing solution. 
     
     
       6. The method as claimed in  claim 1 , wherein the substance is a metal polymer, the stripping solution comprises an organic solvent mixed with an amine-based reducing agent, and said inducing of a current in the conductive pattern heats the stripping solution to a temperature of 30° C. to 90° C. in the vicinity of the conductive pattern. 
     
     
       7. The method as claimed in  claim 1 , wherein the substance is a metal polymer, the striping solution comprises an organic solvent mixed with an amine-based reducing agent, and said inducing of a current in the conductive pattern heats the conductive pattern to a temperature of 35° to 135° C. 
     
     
       8. The method as claimed in  claim 1 , wherein the stripping solution comprises an organic solvent mixed with an amine-based reducing agent. 
     
     
       9. The method as claimed in  claim 7 , wherein the stripping solution is devoid of fluorine. 
     
     
       10. The method as claimed in  claim 8 , wherein the substrate further includes a BPSG layer underlying the conductive layer. 
     
     
       11. A method of removing a targeted substance from a substrate which includes a conductive pattern located at a surface of the substrate, the substance being located adjacent the conductive pattern, said method comprising:
 loading the substrate onto a rotatable chuck;  
 a chemical treatment comprising supplying a stripping solution to the surface of the substrate, the stripping solution having an ability to remove the targeted substance and which ability is enhanced when the stripping solution is heated,  
 rotating the substrate to distribute the stripping solution across the surface of the substrate, and  
 applying an alternating magnetic flux to the substrate, wherein the alternating magnetic flux induces a current in the conductive pattern which heats the conductive pattern while the stripping solution is in contact with the substrate, and wherein the stripping solution is locally heated at the conductive pattern;  
 a subsequent cleaning process of removing the stripping solution by applying a rinsing solution to the substrate and rotating the substrate; and  
 a subsequent process of drying the substrate.  
 
     
     
       12. The method as claimed in  claim 11 , wherein application of the alternating magnetic flux is initiated prior to supply of the stripping solution. 
     
     
       13. The method as claimed in  claim 12 , wherein said applying the alternating magnetic flux, said supplying the stripping solution, and said removing the stripping solution, are repeated in sequence a plurality of times prior to said drying the substrate. 
     
     
       14. The method as claimed in  claim 11 , wherein supply of the stripping solution is initiated before application of the alternating magnetic flux. 
     
     
       15. The method as claimed in  claim 14 , wherein said supplying the stripping solution, said applying the alternating magnetic flux, and said removing the stripping solution, are repeated in sequence a plurality of times prior to said drying the substrate. 
     
     
       16. The method as claimed in  claim 11 , wherein the alternating magnetic flux is applied by applying an alternating current to a coil positioned below the chuck relative to the substrate. 
     
     
       17. The method claimed in  claim 11 , wherein the alternating magnetic flux is applied by applying an alternating current to a coil embedded within the chuck. 
     
     
       18. The method as claimed in  claim 11 , wherein a frequency of the alternating magnetic flux is in a range of 1 kHz to 1 MHz. 
     
     
       19. A method of removing a targeted substance from a substrate which includes a conductive pattern located at a surface of the substrate, the substance being located adjacent the conductive pattern, said method comprising:
 a chemical treatment comprising inducing a current in the conductive pattern which heats the conductive pattern,  
 supplying a stripping solution to the surface of the substrate, and  
 maintaining the stripping solution on the surface of the substrate for a period of time while the conductive pattern is heated such that the stripping solution adjacent the conductive pattern is heated and at least some of the targeted substance is removed from adjacent the conductive pattern by the heated stripping solution; and  
 a subsequent cleaning process of removing the stripping solution from the substrate.  
 
     
     
       20. The method as claimed in  claim 1 , wherein the only field to which the substrate is exposed, while the stripping solution is being heated, is a magnetic field. 
     
     
       21. The method as claimed in  claim 11 , wherein the only field to which the substrate is exposed, while the stripping solution is being heated, is a magnetic field. 
     
     
       22. An apparatus for cleaning a substrate, said apparatus comprising:
 a rotatable chuck having a substrate support surface;  
 a stripping solution supply mechanism positioned over the substrate support surface of the rotatable chuck;  
 a coil; and  
 an alternating current power supply coupled to the coil so as supply an alternating current to the coil, wherein said coil is disposed relative to said substrate support surface such that the alternating current of the coil creates an alternating magnetic flux over the substrate support surface, and wherein the alternating magnetic flux is sufficient to heat a conductive pattern of a substrate placed on the substrate support surface.  
 
     
     
       23. An apparatus as claimed in  claim 22 , wherein the rotatable chuck is made of an electrically non-conductive material. 
     
     
       24. An apparatus as claimed in  claim 23 , wherein the coil is located below chuck opposite the substrate support surface. 
     
     
       25. An apparatus as claimed in  claim 23 , wherein the coil is embedded within the chuck. 
     
     
       26. An apparatus as claimed in  claim 22 , wherein the stripping solution supply mechanism includes a nozzle outlet located over a center region of the substrate support surface of the rotatable chuck. 
     
     
       27. An apparatus as claimed in  claim 25 , further comprising a rinsing solution nozzle outlet located over the center region of the substrate support surface of the chuck. 
     
     
       28. An apparatus as claimed in  claim 22 , further comprising a motor for rotating the chuck. 
     
     
       29. An apparatus as claimed in  claim 22 , wherein a frequency of the alternating current supplied by the alternating current supply is in a range of 1 kHz to 1 MHz.

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