Inventor
LEE HENGYUAN
TW19 patents
⚠️ This page may combine multiple inventors who share the name “LEE HENGYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS12575114B2Mar 10, 2026
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12469553B2Nov 11, 2025
Operating method, memory system, and control circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342548B2Jun 24, 2025
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302765B2May 13, 2025
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12114512B2Oct 8, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035542B2Jul 9, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990182B2May 21, 2024
Operation methods for ovonic threshold selector, memory device and memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11944019B2Mar 26, 2024
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805661B2Oct 31, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400710B2Aug 26, 2025
Memory selector threshold voltage recovery
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12334147B2Jun 17, 2025
First fire operation for ovonic threshold switch selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12014774B2Jun 18, 2024
Memory selector threshold voltage recovery
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11955173B2Apr 9, 2024
First fire operation for ovonic threshold switch selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12249369B2Mar 11, 2025
Adjusting operation voltage of cross point memory according to aging information
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12198759B2Jan 14, 2025
Memory circuit and method for reading memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
IND TECH RES INST
4 patentsUS8362454B2Jan 29, 2013
Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same
IND TECH RES INST21 citations88
US7745811B2Jun 29, 2010
Phase change memory devices and methods for fabricating the same
IND TECH RES INST13 citations79
US7781298B2Aug 24, 2010
Methods for fabricating a capacitor
IND TECH RES INST0 citations51
US7405122B2Jul 29, 2008
Methods for fabricating a capacitor
IND TECH RES INST0 citations51