P

Inventor

LEE HENGYUAN

TW19 patents
⚠️ This page may combine multiple inventors who share the name “LEE HENGYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US12575114B2Mar 10, 2026

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12469553B2Nov 11, 2025

Operating method, memory system, and control circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342548B2Jun 24, 2025

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302765B2May 13, 2025

Memory devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12114512B2Oct 8, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035542B2Jul 9, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990182B2May 21, 2024

Operation methods for ovonic threshold selector, memory device and memory array

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11944019B2Mar 26, 2024

Memory devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805661B2Oct 31, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400710B2Aug 26, 2025

Memory selector threshold voltage recovery

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12334147B2Jun 17, 2025

First fire operation for ovonic threshold switch selector

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12014774B2Jun 18, 2024

Memory selector threshold voltage recovery

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11955173B2Apr 9, 2024

First fire operation for ovonic threshold switch selector

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12249369B2Mar 11, 2025

Adjusting operation voltage of cross point memory according to aging information

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12198759B2Jan 14, 2025

Memory circuit and method for reading memory circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

IND TECH RES INST

4 patents