Inventor
HELLINGS GEERT
BE17 patents
⚠️ This page may combine multiple inventors who share the name “HELLINGS GEERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC VZW
8 patentsUS11114435B2Sep 7, 2021
FinFET having locally higher fin-to-fin pitch
IMEC VZW2 citations72
US9391060B2Jul 12, 2016
Electrostatic discharge protection
IMEC VZW3 citations71
US10469083B2Nov 5, 2019
Breakdown-based physical unclonable function
IMEC VZW4 citations65
US10566434B2Feb 18, 2020
Co-fabricated gate-all-around field effect transistor and fin field effect transistor
IMEC VZW1 citations61
US11391692B2Jul 19, 2022
Field-effect transistor-based biosensor
IMEC VZW0 citations50
US11735645B2Aug 22, 2023
Method for forming a bioFET sensor including semiconductor fin or nanowire
IMEC VZW0 citations44
US10680098B2Jun 9, 2020
High voltage tolerant LDMOS
IMEC VZW0 citations41
US9847336B2Dec 19, 2017
Method of forming a junction field effect transistor
IMEC VZW0 citations39
IMEC
7 patentsUS9029217B1May 12, 2015
Band engineered semiconductor device and method for manufacturing thereof
IMEC5 citations83
US7915608B2Mar 29, 2011
Scalable quantum well device and method for manufacturing the same
IMEC9 citations83
US9006705B2Apr 14, 2015
Device with strained layer for quantum well confinement and method for manufacturing thereof
IMEC8 citations81
US9263401B2Feb 16, 2016
Semiconductor device comprising a diode and a method for producing such a device
IMEC4 citations70
US8963225B2Feb 24, 2015
Band engineered semiconductor device and method for manufacturing thereof
IMEC1 citations51
US8698129B2Apr 15, 2014
Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor
IMEC0 citations40
US9159860B2Oct 13, 2015
Avalanche photodetector element
IMEC0 citations39