Inventor

SON YONG HOON

KR106 patents

⚠️ This page may combine multiple inventors who share the name “SON YONG HOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SON YONG HOON

SAMSUNG ELECTRONICS CO LTD

Vertical-type non-volatile memory devices

Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage

Methods of fabricating nonvolatile memory devices

Multi-structured Si-fin

Methods of forming semiconductor devices having buried oxide patterns

Methods of fabricating fin field effect transistors

Methods of fabricating fin field effect transistors having capping insulation layers

Multi-structured Si-fin and method of manufacture

Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations

Semiconductor memory device

Vertical memory devices

Vertical-type semiconductor devices and methods of manufacturing the same

Methods of fabricating MOS transistors having recesses with elevated source/drain regions

Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same

MOS transistors having recesses with elevated source/drain regions

Fin field effect transistors having capping insulation layers

Method of manufacturing a stacked semiconductor device

Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations

Fin field effect transistors including epitaxial fins

Methods of forming semiconductor devices including fin structures and related devices

Three-dimensional semiconductor memory devices and methods of fabricating the same

Semiconductor device and method of manufacturing the same

Nonvolatile memory device and a method for fabricating the same

Memory device and method of manufacturing the same

Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film

Three-dimensional semiconductor device

Semiconductor device and method of fabricating the same

Vertical-type semiconductor device

Semiconductor memory device and method for manufacturing the same

Semiconductor memory device and method of fabricating the same

Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same

Vertical-type semiconductor devices and methods of manufacturing the same

Methods of forming a semiconductor device

Three-dimensional semiconductor memory device with concave convex separation structures

SON YONG-HOON

Vertical-type semiconductor devices

Vertical-type non-volatile memory devices

Vertical-type non-volatile memory devices and methods of manufacturing the same

Methods of manufacturing rewriteable three-dimensional semiconductor memory devices

Semiconductor devices and methods for fabricating the same

Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrate

Methods of fabricating MOS transistors having recesses with elevated source/drain regions

Three-dimensional semiconductor memory devices and methods of forming the same

Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials

Vertical type semiconductor device

Method of manufacturing vertical semiconductor device

SON YONG HOON

Semiconductor device including channel structure

Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same

Vertical memory devices

KIM JUNG HO

Semiconductor memory devices and methods of forming the same

KANG PIL-KYU

Methods of manufacturing nonvolatile memory devices