P

Inventor

RADU IONUT

FR45 patents
⚠️ This page may combine multiple inventors who share the name “RADU IONUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SOITEC SILICON ON INSULATOR

32 patents
US11711065B2Jul 25, 2023

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

SOITEC SILICON ON INSULATOR5 citations85
US9165945B1Oct 20, 2015

Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures

SOITEC SILICON ON INSULATOR8 citations84
US9041214B2May 26, 2015

Bonded processed semiconductor structures and carriers

SOITEC SILICON ON INSULATOR8 citations84
US8866305B2Oct 21, 2014

Methods of forming bonded semiconductor structures

SOITEC SILICON ON INSULATOR12 citations84
US11637542B2Apr 25, 2023

Heterostructure and method of fabrication

SOITEC SILICON ON INSULATOR1 citations73
US10924081B2Feb 16, 2021

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

SOITEC SILICON ON INSULATOR1 citations73
US10826459B2Nov 3, 2020

Heterostructure and method of fabrication

SOITEC SILICON ON INSULATOR2 citations73
US10608610B2Mar 31, 2020

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

SOITEC SILICON ON INSULATOR3 citations73
US9553014B2Jan 24, 2017

Bonded processed semiconductor structures and carriers

SOITEC SILICON ON INSULATOR2 citations73
US11367650B2Jun 21, 2022

Structures for radiofrequency applications and related methods

SOITEC SILICON ON INSULATOR3 citations72
US10943815B2Mar 9, 2021

Structure for radiofrequency applications

SOITEC SILICON ON INSULATOR2 citations72
US9138980B2Sep 22, 2015

Apparatus for manufacturing semiconductor devices

SOITEC SILICON ON INSULATOR3 citations63
US12316298B2May 27, 2025

Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate

SOITEC SILICON ON INSULATOR0 citations62
US12165900B2Dec 10, 2024

Method of mechanical separation for a double layer transfer

SOITEC SILICON ON INSULATOR0 citations62
US12143093B2Nov 12, 2024

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

SOITEC SILICON ON INSULATOR0 citations62
US12101080B2Sep 24, 2024

Heterostructure and method of fabrication

SOITEC SILICON ON INSULATOR0 citations62
US11923239B2Mar 5, 2024

Structures for radiofrequency applications and related methods

SOITEC SILICON ON INSULATOR0 citations62
US11742233B2Aug 29, 2023

Method of mechanical separation for a double layer transfer

SOITEC SILICON ON INSULATOR0 citations62
US11652464B2May 16, 2023

Surface acoustic wave device and associated production method

SOITEC SILICON ON INSULATOR0 citations62
US11600766B2Mar 7, 2023

Method for manufacturing a monocrystalline piezoelectric layer

SOITEC SILICON ON INSULATOR1 citations62
US11595020B2Feb 28, 2023

Heterostructure and method of fabrication

SOITEC SILICON ON INSULATOR0 citations62
US10910250B2Feb 2, 2021

Method of mechanical separation for a double layer transfer

SOITEC SILICON ON INSULATOR0 citations62
US12588250B2Mar 24, 2026

NCFET transistor comprising a semiconductor-on-insulator substrate

SOITEC SILICON ON INSULATOR0 citations58
US11205702B2Dec 21, 2021

Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit

SOITEC SILICON ON INSULATOR0 citations52
US10276492B2Apr 30, 2019

Method for fabricating semiconductor structures including a high resistivity layer, and related semiconductor structures

SOITEC SILICON ON INSULATOR0 citations52
US11088016B2Aug 10, 2021

Method for locating devices

SOITEC SILICON ON INSULATOR0 citations50
US9905531B2Feb 27, 2018

Method for producing composite structure with metal/metal bonding

SOITEC SILICON ON INSULATOR1 citations50
US12320031B2Jun 3, 2025

Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC

SOITEC SILICON ON INSULATOR0 citations49
US12198983B2Jan 14, 2025

Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC

SOITEC SILICON ON INSULATOR0 citations49
US8841742B2Sep 23, 2014

Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods

SOITEC SILICON ON INSULATOR0 citations42
US9548237B2Jan 17, 2017

Method for transferring a layer comprising a compressive stress layer and related structures

SOITEC SILICON ON INSULATOR0 citations41
US9659777B2May 23, 2017

Process for stabilizing a bonding interface, located within a structure which comprises an oxide layer and structure obtained

SOITEC SILICON ON INSULATOR0 citations35

SADAKA MARIAM

6 patents

RADU IONUT

3 patents

LANDRU DIDIER

1 patent

BETHOUX JEAN-MARC

1 patent

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

1 patent

RUNECAST SOLUTIONS LTD

1 patent