Inventor

WANG SZU-YU

TW45 patents

⚠️ This page may combine multiple inventors who share the name “WANG SZU-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG SZU-YU

TAIWAN SEMICONDUCTOR MFG CO LTD

Integrated circuit with backside structures to reduce substrate warp

Stacked capacitor with enhanced capacitance and method of manufacturing the same

Integrated circuit with backside structures to reduce substrate warp

Deep trench capacitor

Integrated circuit with backside structures to reduce substrate warp

Semiconductor device and fabrication method thereof

Integrated circuit with backside structures to reduce substrate warp

Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method

Semiconductor device and fabrication method thereof

Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method

Multi-function substrate

Semiconductor structure and method for forming the same

Multi-function substrate

Method for forming semiconductor structure for memory device

Semiconductor device and fabrication method thereof

Semiconductor structure for memory device and method for forming the same

Multi-function substrate

Semiconductor device and fabrication method thereof

E-flash cell band engineering for erasing speed enhancement

Silicon dot formation by direct self-assembly method for flash memory

Silicon nano-tip thin film for flash memory cells

Stacked capacitor with enhanced capacitance

Silicon nano-tip thin film for flash memory cells

Well controlled conductive dot size in flash memory

Silicon dot formation by self-assembly method and selective silicon growth for flash memory

Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method

Silicon dot formation by self-assembly method and selective silicon growth for flash memory

Method of forming semiconductor structure of control gate, and semiconductor device

Uniformity control for Si dot size in flash memory

e-Flash Si dot nitrogen passivation for trap reduction

MACRONIX INT CO LTD

Depletion mode bandgap engineered memory

Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays

Operating method of non-volatile memory device

Charge trapping dielectric structure for non-volatile memory

Memory device and method of manufacturing including deuterated oxynitride charge trapping structure

Method for manufacturing non-volatile memory

Tunnel oxynitride in flash memories

Multi-gate bandgap engineered memory

Methods of operating bandgap engineered memory

Methods for reducing wordline sheet resistance

LUE HANG-TING

Multi-gate bandgap engineered memory

Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays

Multi-gate bandgap engineered memory

Operating method of non-volatile memory device

IND TECH RES INST

Method of performing uplink channel estimation and base station using the same