Inventor
NOPPER MARKUS
DE16 patents
⚠️ This page may combine multiple inventors who share the name “NOPPER MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
10 patentsUS6951816B2Oct 4, 2005
Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst
ADVANCED MICRO DEVICES INC25 citations92
US6620726B1Sep 16, 2003
Method of forming metal lines having improved uniformity on a substrate
ADVANCED MICRO DEVICES INC21 citations92
US6958247B2Oct 25, 2005
Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process
ADVANCED MICRO DEVICES INC10 citations72
US7517782B2Apr 14, 2009
Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase
ADVANCED MICRO DEVICES INC2 citations62
US7169664B2Jan 30, 2007
Method of reducing wafer contamination by removing under-metal layers at the wafer edge
ADVANCED MICRO DEVICES INC3 citations62
US7899570B2Mar 1, 2011
Advanced automatic deposition profile targeting and control by applying advanced polish endpoint system feedback
ADVANCED MICRO DEVICES INC6 citations58
US7476552B2Jan 13, 2009
Method of reworking a semiconductor structure
ADVANCED MICRO DEVICES INC0 citations50
US7781329B2Aug 24, 2010
Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices
ADVANCED MICRO DEVICES INC0 citations49
US7560381B2Jul 14, 2009
Technique for metal deposition by electroless plating using an activation scheme including a substrate heating process
ADVANCED MICRO DEVICES INC1 citations48
US7615103B2Nov 10, 2009
Apparatus and method for removing bubbles from a process liquid
ADVANCED MICRO DEVICES INC0 citations47
SEIDEL ROBERT
2 patentsUS8883610B2Nov 11, 2014
Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines
SEIDEL ROBERT8 citations83
US8389401B2Mar 5, 2013
Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
SEIDEL ROBERT0 citations40