Inventor

LIM HAN JIN

KR55 patents

⚠️ This page may combine multiple inventors who share the name “LIM HAN JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM HAN JIN

SAMSUNG ELECTRONICS CO LTD

Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors

Method of fabricating concave capacitor including adhesion spacer

Storage electrode of a semiconductor memory device and method for fabricating the same

Semiconductor device

Vertical memory devices and methods of manufacturing the same

Semiconductor device having capacitor and method of fabricating the semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and method of manufacturing the same

Semiconductor devices having metal silicide layers and methods of manufacturing such semiconductor devices

Method of forming a capacitor of an integrated circuit device

Semiconductor devices including diffusion barriers with high electronegativity metals

Methods of fabricating stack type capacitors of semiconductor devices

Capacitors including amorphous dielectric layers and methods of forming the same

Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

Methods for manufacturing semiconductor memory devices

Semiconductor device

Semiconductor device including capacitor and method of forming the same

Methods of forming material layer

Organometallic compounds and methods of forming thin films including the use of the same

Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device including vertical channel layer and method of manufacturing the same

Semiconductor devices including buried channels

Methods of fabricating semiconductor devices using nanowires

Storage electrode of a semiconductor memory device

Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same

Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby

Capacitors including a cavity containing a buried layer

Semiconductor device including capacitor and method of forming the same

Semiconductor device

Vertical memory device with a channel layer in a stacked dielectric layer

Semiconductor device including capacitor and method of forming the same

Vertical memory device with a channel layer in a stacked dielectric layer

Methods of forming material layer

Semiconductor device and method of manufacturing the same

Semiconductor device including dielectric layer

Semiconductor device including dielectric layer

Semiconductor device

Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure

Semiconductor devices including nanowire capacitors and fabricating methods thereof

Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same

Fabricating equipment for semiconductor device and method for fabricating semiconductor device

Methods of forming multilayer dielectric regions using varied deposition parameters

KIM YOUNG-KUK

Methods of manufacturing semiconductor devices having self-aligned contact pads

Semiconductor devices having self-aligned contact pads

LEE DONG-KAK

Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure

Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure

OH JUNG-HWAN

Semiconductor device and fabricating method thereof

PARK YOUNG-GEUN

Methods of fabricating memory devices using wet etching and dry etching