Inventor
LAW KAM
US14 patents
⚠️ This page may combine multiple inventors who share the name “LAW KAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
10 patentsUS6818529B2Nov 16, 2004
Apparatus and method for forming a silicon film across the surface of a glass substrate
APPLIED MATERIALS INC151 citations96
US5589233ADec 31, 1996
Single chamber CVD process for thin film transistors
APPLIED MATERIALS INC124 citations96
US5928732AJul 27, 1999
Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
APPLIED MATERIALS INC57 citations94
US5380566AJan 10, 1995
Method of limiting sticking of body to susceptor in a deposition treatment
APPLIED MATERIALS INC55 citations94
US6869838B2Mar 22, 2005
Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
APPLIED MATERIALS INC35 citations92
US6207304B1Mar 27, 2001
Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
APPLIED MATERIALS INC31 citations91
US5861197AJan 19, 1999
Deposition of high quality conformal silicon oxide thin films on glass substrates
APPLIED MATERIALS INC40 citations90
US5851602ADec 22, 1998
Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
APPLIED MATERIALS INC44 citations90
US7439191B2Oct 21, 2008
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
APPLIED MATERIALS INC18 citations80
US7732010B2Jun 8, 2010
Method for supporting a glass substrate to improve uniform deposition thickness
APPLIED MATERIALS INC1 citations51
APPLIED KOMATSU TECHNOLOGY INC
3 patentsUS5902650AMay 11, 1999
Method of depositing amorphous silicon based films having controlled conductivity
APPLIED KOMATSU TECHNOLOGY INC44 citations92
US5892328AApr 6, 1999
High-power, plasma-based, reactive species generator
APPLIED KOMATSU TECHNOLOGY INC37 citations92
US6352910B1Mar 5, 2002
Method of depositing amorphous silicon based films having controlled conductivity
APPLIED KOMATSU TECHNOLOGY INC13 citations70