US7439191B2ExpiredUtilityPatentIndex 80

Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications

Assignee: APPLIED MATERIALS INCPriority: Apr 5, 2002Filed: Apr 5, 2002Granted: Oct 21, 2008

Est. expiryApr 5, 2022(expired)· nominal 20-yr term from priority

Inventors:LAW KAM SHANG QUAN YUAN HARSHBARGER WILLIAM REID MAYDAN DAN

H10D 30/0321H10D 86/00H10D 30/0316H10D 30/0314H10D 86/60H10D 86/40H10D 86/0221C23C 16/24C23C 16/45542C23C 16/45525

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References

Claims

Abstract

A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.

Claims

exact text as granted — not AI-modified

What is claimed is:

1. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
(a) providing a substrate;
(b) depositing one or more silicon layers on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas; and
(c) forming a gate metal layer on at least one of the one or more silicon layers.

2. The method of claim 1 wherein the silicon-containing precursor comprises a compound selected from the group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), silicon tetrachloride (SiCl 4 , dichlorosilane (SiCl 2 H 2 ) and trichlorosilane (SiCl 3 H).

3. The method of claim 1 wherein the reducing gas is selected from the group consisting of hydrogen (H 2 ), borane (BH 3 ) and diborane (B 2 H 6 ).

4. The method of claim 1 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

5. The method of claim 4 wherein the one or more dopant compounds are selected from the group consisting of arsine, phosphine and boron trihydride.

6. The method of claim 4 further comprising ion-implanting portions of the doped one or more silicon semiconductor layers in order to form a semiconductor junction.

7. The method of claim 1 wherein the silicon layer deposition is performed at a temperature between about 100° C. and about 600° C.

8. The method of claim 1 wherein one of the one or more silicon layers comprises a source region of the transistor.

9. The method of claim 1 wherein one of the one or more silicon layers comprises a drain region of the transistor.

10. The method of claim 1 further comprising forming a gate dielectric layer on the gate metal layer.

11. The method of claim 1 wherein the reducing gas comprises a plasma.

12. The method of claim 1 wherein the one or more silicon layers of step (b) are silicon seed layers and a silicon bulk layer is formed thereon.

13. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas.

14. The method of claim 13 wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration.

15. The method of claim 13 wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration.

16. The method of claim 13 wherein the period of exposure to the silicon-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

17. The method of claim 13 wherein at least one period of exposure to the silicon-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

18. The method of claim 13 wherein the period of exposure to the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

19. The method of claim 13 wherein at least one period of exposure to the reducing gas for one or more deposition cycles of the cyclical deposition process has a different duration.

20. The method of claim 13 wherein a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

21. The method of claim 13 wherein at least one period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas for one or more deposition cycles of the cyclical deposition process has a different duration.

22. The method of claim 13 wherein a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

23. The method of claim 13 wherein at least one period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

24. The method of claim 13 wherein the silicon-containing precursor comprises a compound selected from the group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), silicon tetrachloride (SiCl 4 ), dichlorosilane (SiCl 2 H 2 ), and trichlorosilane (SiCl 3 H).

25. The method of claim 13 wherein the reducing gas is selected from the group consisting of hydrogen (H 2 ), borane (BH 3 ) and diborane (B 2 H 6 ).

26. The method of claim 13 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

27. The method of claim 26 wherein the one or more dopant compounds are selected from the group consisting of arsine, phosphine and boron trihydride.

28. The method of claim 26 further comprising ion-implanting portions of the one or more silicon semiconductor layers in order to form a semiconductor junction.

29. The method of claim 13 wherein the silicon layer deposition is performed at a temperature between about 100° C. and about 600° C.

30. The method of claim 13 wherein the reducing gas comprises a plasma.

31. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas, wherein there is a period of flow of the inert gas between a period of exposure to the silicon-containing gas and a period of exposure to the reducing gas and a period of flow of the inert gas between a period of exposure to the reducing gas and the period of exposure to the silicon-containing gas, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration.

32. The method of claim 31 wherein the period of exposure to the silicon-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

33. The method of claim 31 wherein at least one period of exposure to the silicon-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

34. The method of claim 31 wherein the period of exposure to the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

35. The method of claim 31 wherein at least one period of exposure to the reducing gas for one or more deposition cycles of the cyclical deposition process has a different duration.

36. The method of claim 31 wherein a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

37. The method of claim 31 wherein at least one period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the reducing gas during each deposition cycle of the cyclical deposition process has a different duration.

38. The method of claim 31 wherein a period of flow of the inert gas between the period of exposure to the reducing gas and the silicon-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

39. The method of claim 31 wherein at least one period of flow of the inert gas between the period of exposure to the reducing gas and the silicon-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

40. The method of claim 31 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

41. The method of claim 31 wherein the reducing gas comprises a plasma.

42. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas, wherein there is a period of flow of the inert gas between a period of exposure to the silicon-containing gas and a period of exposure to the reducing gas and a period of flow of the inert gas between a period of exposure to the reducing gas and the period of exposure to the silicon-containing gas, and wherein at least one of the period of exposure the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration.

43. The method of claim 42 wherein the period of exposure to the silicon-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

44. The method of claim 42 wherein at least one period of exposure to the silicon-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

45. The method of claim 42 wherein the period of exposure to the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

46. The method of claim 42 wherein at least one period of exposure to the reducing gas for one or more deposition cycles of the cyclical deposition process has a different duration.

47. The method of claim 42 wherein a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the reducing gas during each deposition cycle of the cyclical deposition process has the same duration.

48. The method of claim 42 wherein at least one period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the reducing gas during each deposition cycle of the cyclical deposition process has a different duration.

49. The method of claim 42 wherein a period of flow of the inert gas between the period of exposure to the reducing gas and the silicon-containing precursor during each deposition cycle of the cyclical deposition process has the same duration.

50. The method of claim 42 wherein at least one period of flow of the inert gas between the period of exposure to the reducing gas and the silicon-containing precursor for one or more deposition cycles of the cyclical deposition process has a different duration.

51. The method of claim 42 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

52. The method of claim 42 wherein the reducing gas comprises a plasma.

53. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas, wherein there is a period of flow of the inert gas between a period of exposure to the silicon-containing gas and a period of exposure to the reducing gas and a period of flow of the inert gas between a period of exposure to the reducing gas and the period of exposure to the silicon-containing gas, wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.

54. The method of claim 53 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

55. The method of claim 53 wherein the reducing gas comprises a plasma.

56. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas, wherein there is a period of flow of the inert gas between a period of exposure to the silicon-containing gas and a period of exposure to the reducing gas and a period of flow of the inert gas between a period of exposure to the reducing gas and the period of exposure to the silicon-containing gas, wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.

57. The method of claim 56 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

58. The method of claim 56 wherein the reducing gas comprises a plasma.

59. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas, wherein there is a period of flow of the inert gas between a period of exposure to the silicon-containing gas and a period of exposure to the reducing gas and a period of flow of the inert gas between a period of exposure to the reducing gas and the period of exposure to the silicon-containing gas, wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.

60. The method of claim 59 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

61. The method of claim 59 wherein the reducing gas comprises a plasma.

62. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
providing a substrate; and
depositing one or more silicon layers on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to a silicon-containing precursor and a reducing gas, wherein there is a period of flow of the inert gas between a period of exposure to the silicon-containing gas and a period of exposure to the reducing gas and a period of flow of the inert gas between a period of exposure to the reducing gas and the period of exposure to the silicon-containing gas, wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.

63. The method of claim 62 wherein one or more dopant compounds are adsorbed on the substrate along with one of either the silicon-containing precursor and the reducing gas.

64. The method of claim 62 wherein the reducing gas comprises a plasma.

65. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
positioning a substrate in a processing chamber;
establishing a flow of an inert gas in the processing chamber;
introducing a pulse of a silicon-containing precursor gas into the processing chamber;
introducing a pulse of a doping gas into the processing chamber, wherein the pulse of the silicon-containing precursor gas and the pulse of the dopant gas overlap;
generating a plasma of the silicon-containing precursor gas and the dopant gas by applying a high frequency HF power in the processing chamber;
introducing a pulse of a purge gas into the processing chamber;
introducing a pulse of a reducing gas into the processing chamber to form a silicon-containing layer; and
introducing a pulse of a second purge gas into the processing chamber.

66. The method of claim 65 , wherein the reducing gas is selected from the group consisting of hydrogen, borane, diborane, and derivatives thereof.

67. The method of claim 65 , wherein the silicon-containing precursor gas comprises a compound selected from the group consisting of silane, disilane, silicon tetrachloride, dichlorosilane, and trichlorosilane.

68. The method of claim 65 , wherein the high frequency RF power is between about 0.2 W/mm 2 and about 2 W/mm 2 .

69. The method of claim 65 , wherein the high frequency RF power is about 13.56 MHz.

70. The method of claim 65 , wherein the silicon-containing layer is an amorphous silicon layer.

71. The method of claim 65 , wherein the doping gas is selected from the group consisting of arsine, phosphine, and boron trihydride.

72. The method of claim 65 , wherein the substrate is an optically transparent material with dimensions greater than about 500 mm×500 mm.

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