Inventor

HEO JINSEONG

KR90 patents

Patents

50 patents

US10714500B2Jul 14, 2020

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84

US10553684B2Feb 4, 2020

Optical sensor and image sensor including graphene quantum dots

SAMSUNG ELECTRONICS CO LTD5 citations84

US9806218B2Oct 31, 2017

Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations84

US9735233B2Aug 15, 2017

Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device

SAMSUNG ELECTRONICS CO LTD7 citations84

US9595580B2Mar 14, 2017

Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element

SAMSUNG ELECTRONICS CO LTD11 citations84

US11145731B2Oct 12, 2021

Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device

SAMSUNG ELECTRONICS CO LTD2 citations73

US10217513B2Feb 26, 2019

Phase change memory devices including two-dimensional material and methods of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations73

US10186545B2Jan 22, 2019

Image sensor including visible and near-infrared light detectors and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations73

US10096735B2Oct 9, 2018

Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US9691853B2Jun 27, 2017

Electronic device including graphene and quantum dots

SAMSUNG ELECTRONICS CO LTD5 citations73

US11996150B2May 28, 2024

Non-volatile content addressable memory device having simple cell configuration and operating method of the same

SAMSUNG ELECTRONICS CO LTD2 citations72

US12119060B2Oct 15, 2024

Content-addressable memory and electronic device including the same

SAMSUNG ELECTRONICS CO LTD2 citations71

US10079313B2Sep 18, 2018

Graphene electronic device having channel layer including graphene islands and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations69

US12568660B2Mar 3, 2026

Electronic devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12457792B2Oct 28, 2025

Thin film structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12382644B2Aug 5, 2025

Thin film structure including dielectric material layer and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12369361B2Jul 22, 2025

Integrated circuit including transistors and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12283629B2Apr 22, 2025

Ferroelectric thin-film structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12230711B2Feb 18, 2025

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12224346B2Feb 11, 2025

Domain switching devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12206009B2Jan 21, 2025

Electronic devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12191311B2Jan 7, 2025

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

SAMSUNG ELECTRONICS CO LTD0 citations62

US12176413B2Dec 24, 2024

Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12107140B2Oct 1, 2024

Thin film structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12100749B2Sep 24, 2024

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

SAMSUNG ELECTRONICS CO LTD0 citations62

US12094971B2Sep 17, 2024

Electronic device including ferroelectric layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US12089416B2Sep 10, 2024

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12087840B2Sep 10, 2024

Semiconductor device and capacitor including hydrogen-incorporated oxide layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US12034049B2Jul 9, 2024

Superlattice structure including two-dimensional material and device including the superlattice structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US11984514B2May 14, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62

US11908918B2Feb 20, 2024

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11888016B2Jan 30, 2024

Image sensor for high photoelectric conversion efficiency and low dark current

SAMSUNG ELECTRONICS CO LTD0 citations62

US11887989B2Jan 30, 2024

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

SAMSUNG ELECTRONICS CO LTD0 citations62

US11848366B2Dec 19, 2023

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11824118B2Nov 21, 2023

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11824119B2Nov 21, 2023

Domain switching devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11824117B2Nov 21, 2023

Oxide semiconductor transistor

SAMSUNG ELECTRONICS CO LTD0 citations62

US11804536B2Oct 31, 2023

Thin film structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

Showing the top 50 of 90 patents by PatentIndex Score.

HEO JINSEONG

Patents

Electronic device and method of manufacturing the same

Optical sensor and image sensor including graphene quantum dots

Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device

Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element

Electronic device and method of manufacturing the same

Integrated circuit including transistors and a method of manufacturing the same

Electronic devices and methods of manufacturing the same

Electronic device and method of manufacturing the same

Electronic device including ferroelectric layer

Domain switching devices and methods of manufacturing the same

Electronic device and method of manufacturing the same

Integrated circuit including transistors and a method of manufacturing the same

Electronic device including ferroelectric layer

Electronic device and method of manufacturing the same

Electronic device and method of manufacturing the same

Logic switching device and method of manufacturing the same

Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device

Phase change memory devices including two-dimensional material and methods of operating the same

Image sensor including visible and near-infrared light detectors and method of manufacturing the same

Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

Electronic device including graphene and quantum dots

Non-volatile content addressable memory device having simple cell configuration and operating method of the same

Content-addressable memory and electronic device including the same

Graphene electronic device having channel layer including graphene islands and method of fabricating the same

Electronic devices and methods of manufacturing the same

Thin film structure and electronic device including the same

Thin film structure including dielectric material layer and electronic device employing the same

Integrated circuit including transistors and a method of manufacturing the same

Ferroelectric thin-film structure and electronic device including the same

Electronic device and method of manufacturing the same

Domain switching devices and methods of manufacturing the same

Electronic devices and methods of manufacturing the same

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same

Thin film structure and semiconductor device including the same

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

Electronic device including ferroelectric layer

Electronic device and method of manufacturing the same

Semiconductor device and capacitor including hydrogen-incorporated oxide layer

Superlattice structure including two-dimensional material and device including the superlattice structure

Semiconductor device

Electronic device and method of manufacturing the same

Image sensor for high photoelectric conversion efficiency and low dark current

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

Electronic device and method of manufacturing the same

Electronic device and method of manufacturing the same

Domain switching devices and methods of manufacturing the same

Oxide semiconductor transistor

Thin film structure and semiconductor device including the same