Inventor

JO SANGHYUN

KR61 patents

Patents

50 patents

US10714500B2Jul 14, 2020

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

SAMSUNG ELECTRONICS CO LTD0 citations62

US12176413B2Dec 24, 2024

Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12132133B2Oct 29, 2024

Avalanche photodetectors and image sensors including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12107140B2Oct 1, 2024

Thin film structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12100749B2Sep 24, 2024

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

SAMSUNG ELECTRONICS CO LTD0 citations62

US12094971B2Sep 17, 2024

Electronic device including ferroelectric layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US12089416B2Sep 10, 2024

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11908918B2Feb 20, 2024

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11887989B2Jan 30, 2024

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

SAMSUNG ELECTRONICS CO LTD0 citations62

US11888016B2Jan 30, 2024

Image sensor for high photoelectric conversion efficiency and low dark current

SAMSUNG ELECTRONICS CO LTD0 citations62

US11848366B2Dec 19, 2023

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11824119B2Nov 21, 2023

Domain switching devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11824118B2Nov 21, 2023

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11804536B2Oct 31, 2023

Thin film structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11721781B2Aug 8, 2023

Avalanche photodetectors and image sensors including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11701728B2Jul 18, 2023

Logic switching device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11676999B2Jun 13, 2023

Electronic devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11646375B2May 9, 2023

Ferroelectric thin-film structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11626489B2Apr 11, 2023

Optical sensor and image sensor including graphene quantum dots

SAMSUNG ELECTRONICS CO LTD0 citations62

US11600712B2Mar 7, 2023

Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US11538918B2Dec 27, 2022

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11527635B2Dec 13, 2022

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

SAMSUNG ELECTRONICS CO LTD1 citations62

US11417790B2Aug 16, 2022

Avalanche photodetectors and image sensors including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11367799B2Jun 21, 2022

Broadband multi-purpose optical device and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11305365B2Apr 19, 2022

Logic switching device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11239274B2Feb 1, 2022

Image sensor for high photoelectric conversion efficiency and low dark current

SAMSUNG ELECTRONICS CO LTD0 citations62

US11222953B2Jan 11, 2022

Optical sensor and image sensor including graphene quantum dots

SAMSUNG ELECTRONICS CO LTD0 citations62

US11018001B2May 25, 2021

Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US11004888B2May 11, 2021

Photoelectric conversion element and optical sensor including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

Showing the top 50 of 61 patents by PatentIndex Score.

JO SANGHYUN

Patents

Electronic device and method of manufacturing the same

Optical sensor and image sensor including graphene quantum dots

Electronic device and method of manufacturing the same

Integrated circuit including transistors and a method of manufacturing the same

Electronic devices and methods of manufacturing the same

Electronic device and method of manufacturing the same

Electronic device including ferroelectric layer

Domain switching devices and methods of manufacturing the same

Electronic device and method of manufacturing the same

Integrated circuit including transistors and a method of manufacturing the same

Electronic device including ferroelectric layer

Electronic device and method of manufacturing the same

Electronic device and method of manufacturing the same

Logic switching device and method of manufacturing the same

Electronic devices and methods of manufacturing the same

Thin film structure and electronic device including the same

Integrated circuit including transistors and a method of manufacturing the same

Ferroelectric thin-film structure and electronic device including the same

Electronic device and method of manufacturing the same

Domain switching devices and methods of manufacturing the same

Electronic devices and methods of manufacturing the same

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same

Avalanche photodetectors and image sensors including the same

Thin film structure and semiconductor device including the same

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

Electronic device including ferroelectric layer

Electronic device and method of manufacturing the same

Electronic device and method of manufacturing the same

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

Image sensor for high photoelectric conversion efficiency and low dark current

Electronic device and method of manufacturing the same

Domain switching devices and methods of manufacturing the same

Electronic device and method of manufacturing the same

Thin film structure and semiconductor device including the same

Avalanche photodetectors and image sensors including the same

Logic switching device and method of manufacturing the same

Electronic devices and methods of manufacturing the same

Ferroelectric thin-film structure and electronic device including the same

Optical sensor and image sensor including graphene quantum dots

Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same

Electronic device and method of manufacturing the same

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

Avalanche photodetectors and image sensors including the same

Broadband multi-purpose optical device and methods of manufacturing and operating the same

Logic switching device and method of manufacturing the same

Image sensor for high photoelectric conversion efficiency and low dark current

Optical sensor and image sensor including graphene quantum dots

Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same

Photoelectric conversion element and optical sensor including the same