Inventor
WEN MING-CHANG
TW38 patents
⚠️ This page may combine multiple inventors who share the name “WEN MING-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS10319581B1Jun 11, 2019
Cut metal gate process for reducing transistor spacing
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US11107902B2Aug 31, 2021
Dielectric spacer to prevent contacting shorting
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11342444B2May 24, 2022
Dielectric spacer to prevent contacting shorting
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10978351B2Apr 13, 2021
Etch stop layer between substrate and isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12009266B2Jun 11, 2024
Structure for fringing capacitance control
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11817354B2Nov 14, 2023
Local gate height tuning by cmp and dummy gate design
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11508623B2Nov 22, 2022
Local gate height tuning by CMP and dummy gate design
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11387322B2Jul 12, 2022
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10741450B2Aug 11, 2020
Semiconductor device having a metal gate and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11315933B2Apr 26, 2022
SRAM structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12336235B2Jun 17, 2025
Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12374542B2Jul 29, 2025
Cut metal gate process for reducing transistor spacing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051735B2Jul 30, 2024
Dielectric spacer to prevent contacting shorting
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948842B2Apr 2, 2024
Etch stop layer between substrate and isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721544B2Aug 8, 2023
Cut metal gate process for reducing transistor spacing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11239072B2Feb 1, 2022
Cut metal gate process for reducing transistor spacing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121128B2Sep 14, 2021
Structure and method for alignment marks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991628B2Apr 27, 2021
Etch stop layer between substrate and isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12557372B2Feb 17, 2026
Semiconductor device having cut gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349393B2Jul 1, 2025
Semiconductor device transistor having multiple channels with different widths and materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12243782B2Mar 4, 2025
Local gate height tuning by CMP and dummy gate design
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12020989B2Jun 25, 2024
Structure for fringing capacitance control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916110B2Feb 27, 2024
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11901237B2Feb 13, 2024
Semiconductor device having cut gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11437278B2Sep 6, 2022
Method for forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10868003B2Dec 15, 2020
Creating devices with multiple threshold voltages by cut-metal-gate process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10461078B2Oct 29, 2019
Creating devices with multiple threshold voltage by cut-metal-gate process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12156394B2Nov 26, 2024
SRAM structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12057349B2Aug 6, 2024
Profile control of a gap fill structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11177180B2Nov 16, 2021
Profile control of a gap fill structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10665585B2May 26, 2020
Structure and method for alignment marks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10651030B2May 12, 2020
Cut metal gate process for reducing transistor spacing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10163738B2Dec 25, 2018
Structure and method for overlay marks
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52