P

Inventor

WEN MING-CHANG

TW38 patents
⚠️ This page may combine multiple inventors who share the name “WEN MING-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

33 patents
US10319581B1Jun 11, 2019

Cut metal gate process for reducing transistor spacing

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US11107902B2Aug 31, 2021

Dielectric spacer to prevent contacting shorting

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11342444B2May 24, 2022

Dielectric spacer to prevent contacting shorting

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10978351B2Apr 13, 2021

Etch stop layer between substrate and isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12009266B2Jun 11, 2024

Structure for fringing capacitance control

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11817354B2Nov 14, 2023

Local gate height tuning by cmp and dummy gate design

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11508623B2Nov 22, 2022

Local gate height tuning by CMP and dummy gate design

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11387322B2Jul 12, 2022

Semiconductor device having nanosheet transistor and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10741450B2Aug 11, 2020

Semiconductor device having a metal gate and formation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11315933B2Apr 26, 2022

SRAM structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12336235B2Jun 17, 2025

Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12374542B2Jul 29, 2025

Cut metal gate process for reducing transistor spacing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051735B2Jul 30, 2024

Dielectric spacer to prevent contacting shorting

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948842B2Apr 2, 2024

Etch stop layer between substrate and isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721544B2Aug 8, 2023

Cut metal gate process for reducing transistor spacing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11239072B2Feb 1, 2022

Cut metal gate process for reducing transistor spacing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121128B2Sep 14, 2021

Structure and method for alignment marks

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991628B2Apr 27, 2021

Etch stop layer between substrate and isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12557372B2Feb 17, 2026

Semiconductor device having cut gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349393B2Jul 1, 2025

Semiconductor device transistor having multiple channels with different widths and materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12243782B2Mar 4, 2025

Local gate height tuning by CMP and dummy gate design

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12020989B2Jun 25, 2024

Structure for fringing capacitance control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916110B2Feb 27, 2024

Semiconductor device having nanosheet transistor and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11901237B2Feb 13, 2024

Semiconductor device having cut gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11437278B2Sep 6, 2022

Method for forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10868003B2Dec 15, 2020

Creating devices with multiple threshold voltages by cut-metal-gate process

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10461078B2Oct 29, 2019

Creating devices with multiple threshold voltage by cut-metal-gate process

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12156394B2Nov 26, 2024

SRAM structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12057349B2Aug 6, 2024

Profile control of a gap fill structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11177180B2Nov 16, 2021

Profile control of a gap fill structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10665585B2May 26, 2020

Structure and method for alignment marks

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10651030B2May 12, 2020

Cut metal gate process for reducing transistor spacing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10163738B2Dec 25, 2018

Structure and method for overlay marks

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52

WANG HSIEN-CHENG

2 patents

WEN MING-CHANG

1 patent

IND TECH RES INST

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent