P

Inventor

PARK YONG HEE

KR38 patents
⚠️ This page may combine multiple inventors who share the name “PARK YONG HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

22 patents
US10164057B1Dec 25, 2018

Vertical tunneling field effect transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US9729928B2Aug 8, 2017

Apparatus and method for processing audio, method for setting initialization mode, and computer-readable recording medium

SAMSUNG ELECTRONICS CO LTD10 citations81
US10256342B2Apr 9, 2019

Methods of manufacturing fin field effect transistors (FinFETs) comprising reduced gate thicknesses overlying deep trenches

SAMSUNG ELECTRONICS CO LTD7 citations80
US10622476B2Apr 14, 2020

Vertical field effect transistor having two-dimensional channel structure

SAMSUNG ELECTRONICS CO LTD3 citations71
US9742964B2Aug 22, 2017

Audio/visual device and control method thereof

SAMSUNG ELECTRONICS CO LTD2 citations71
US9578210B2Feb 21, 2017

A/V Receiving apparatus and method for delaying output of audio signal and A/V signal processing system

SAMSUNG ELECTRONICS CO LTD3 citations71
US9818879B2Nov 14, 2017

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD2 citations69
US10303588B2May 28, 2019

Systems and methods for test booting a device

SAMSUNG ELECTRONICS CO LTD2 citations65
US10892347B2Jan 12, 2021

Vertical tunneling field effect transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11521902B2Dec 6, 2022

Vertical field-effect transistor (VFET) devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US10957795B2Mar 23, 2021

Vertical field effect transistor having two-dimensional channel structure

SAMSUNG ELECTRONICS CO LTD0 citations61
US8356271B2Jan 15, 2013

Layout testing method and wafer manufacturing method

SAMSUNG ELECTRONICS CO LTD2 citations59
US10790368B2Sep 29, 2020

Vertical FET devices including a contact on protruding portions of a substrate

SAMSUNG ELECTRONICS CO LTD0 citations51
US9905645B2Feb 27, 2018

Vertical field effect transistor having an elongated channel

SAMSUNG ELECTRONICS CO LTD0 citations51
US10818560B2Oct 27, 2020

Vertical field-effect transistor (VFET) devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US9976856B2May 22, 2018

User terminal, method and location tracking system for receiving unique identifier using magnetic field

SAMSUNG ELECTRONICS CO LTD0 citations50
US10405043B2Sep 3, 2019

Apparatus and method for processing audio, method for setting initialization mode, and computer-readable recording medium

SAMSUNG ELECTRONICS CO LTD0 citations49
US9906864B2Feb 27, 2018

Method, user terminal, and audio system, for speaker location detection and level control using magnetic field

SAMSUNG ELECTRONICS CO LTD0 citations49
US12563809B2Feb 24, 2026

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations47
US9323648B2Apr 26, 2016

Automatic testing apparatus for embedded software and automatic testing method thereof

SAMSUNG ELECTRONICS CO LTD0 citations39
US10665702B2May 26, 2020

Vertical bipolar transistors

SAMSUNG ELECTRONICS CO LTD0 citations37
US9966446B2May 8, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations37

HYOSUNG HEAVY IND CORP

6 patents

HYUNDAI MOBIS CO LTD

5 patents

PARK YONG HEE

2 patents

(unassigned)

1 patent

SAMSUNG DISPLAY CO LTD

1 patent

SUH SUNG-SOO

1 patent