Inventor · disambiguated record
Hsin-Huei Chen
Also filed as: CHEN HSIN-HUEI
21 granted patents·8 pending applications·508 citations·filing 1996–2014
95Inventor score
Files withMACRONIX INT CO LTD19INOTERA MEMORIES INC3CHEN HSIN-HUEI1CHIU CHUN-JEN1EXCELLENCE WIRE IND CO LTD1
Top patents by PatentIndex Score
29 records- 0195US6271090B1Method for manufacturing flash memory device with dual floating gates and two bits per cellMACRONIX INT CO LTD·Filed 2000·Granted Aug 7, 2001·331 cites·20 claims
- 0281US6994580B1Network plugEXCELLENCE WIRE IND CO LTD·Filed 2004·Granted Feb 7, 2006·37 cites·1 claims
- 0380US6448126B1Method of forming an embedded memoryMACRONIX INT CO LTD·Filed 2001·Granted Sep 10, 2002·29 cites·11 claims
- 0471US7183166B2Method for forming oxide on ONO structureMACRONIX INT CO LTD·Filed 2003·Granted Feb 27, 2007·13 cites·57 claims
- 0571US6468867B1Method for forming the partial salicideMACRONIX INT CO LTD·Filed 2001·Granted Oct 22, 2002·18 cites·18 claims
- 0667US6372640B1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Granted Apr 16, 2002·15 cites·13 claims
- 0764US6413861B1Method of fabricating a salicide of an embedded memoryMACRONIX INT CO LTD·Filed 2001·Granted Jul 2, 2002·12 cites·9 claims
- 0861US7923770B2Memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Apr 12, 2011·2 cites·13 claims
- 0959US7097945B2Method of reducing critical dimension bias of dense pattern and isolation patternMACRONIX INT CO LTD·Filed 2003·Granted Aug 29, 2006·5 cites·4 claims
- 1058US6566225B2Formation method of shallow trench isolationMACRONIX INT CO LTD·Filed 2001·Granted May 20, 2003·8 cites·7 claims
- 1158US6531393B2Salicide integrated solution for embedded virtual-ground memoryMACRONIX INTERNATIONAL COL LTD·Filed 2001·Granted Mar 11, 2003·11 cites·7 claims
- 1253US9000532B2Vertical PMOS field effect transistor and manufacturing method thereofINOTERA MEMORIES INC·Filed 2014·Granted Apr 7, 2015·0 cites·8 claims
- 1351US6548406B2Method for forming integrated circuit having MONOS device and mixed-signal circuitMACRONIX INT CO LTD·Filed 2001·Granted Apr 15, 2003·5 cites·20 claims
- 1451US6383903B1Method for forming the partial salicideMACRONIX INT CO LTD·Filed 2001·Granted May 7, 2002·5 cites·15 claims
- 1550US7919372B2Method for forming oxide on ONO structureMACRONIX INT CO LTD·Filed 2007·Granted Apr 5, 2011·0 cites·48 claims
- 1650US7241558B2Multi-layer semiconductor integrated circuits enabling stabilizing photolithography process parameters, the photomask being used, and the manufacturing method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 10, 2007·2 cites·18 claims
- 1747US5727967AMetal contact plate of a module plugFiled 1996·Granted Mar 17, 1998·12 cites·1 claims
- 1843US6599793B2Memory array with salicide isolationMACRONIX INT CO LTD·Filed 2001·Granted Jul 29, 2003·1 cites·7 claims
- 1943US6482738B1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Granted Nov 19, 2002·2 cites·17 claims
- 2042US2008124890A1Method for forming shallow trench isolation structureMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
- 2141US2008042191A1Non-volatile memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
- 2237US9105505B2Memory cell having a recessed gate and manufacturing method thereofINOTERA MEMORIES INC·Filed 2013·Granted Aug 11, 2015·0 cites·19 claims
- 2337US8802528B2Vertical PMOS field effect transistor and manufacturing method thereofCHEN HSIN-HUEI·Filed 2010·Granted Aug 12, 2014·0 cites·10 claims
- 2437US2006281255A1Method for forming a sealed storage non-volative multiple-bit memory cellCHIU CHUN-JEN·Filed 2005·Application pending·0 cites
- 2535US2011101448A1Vertical transistor and manufacturing method thereofINOTERA MEMORIES INC·Filed 2010·Application pending·0 cites
- 2635US2003212981A1Method utilizing dummy patterns to fabricate active region for stabilizing lithographic processFiled 2002·Application pending·0 cites
- 2735US2002090797A1Method for protecting insulation corners of shallow trenches by oxidation of poly siliconFiled 2001·Application pending·0 cites
- 2833US2003027421A1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 2932US2003027422A1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
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