Inventor
LIM JIN-SOO
KR27 patents
⚠️ This page may combine multiple inventors who share the name “LIM JIN-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS8013389B2Sep 6, 2011
Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices
SAMSUNG ELECTRONICS CO LTD73 citations98
US9553101B2Jan 24, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD19 citations91
US9171729B2Oct 27, 2015
Methods of manufacturing vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US7858783B2Dec 28, 2010
Metallic compound and organic electroluminescence device comprising the same
SAMSUNG ELECTRONICS CO LTD6 citations70
US9240419B2Jan 19, 2016
Three-dimensional semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US12599000B2Apr 7, 2026
Non-volatile memory device including first and second monitoring channel structures and non-volatile memory system comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50089EAug 20, 2024
Three dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11836606B2Dec 5, 2023
Neural processing unit and electronic apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US7973168B2Jul 5, 2011
Metallic compound and organic electroluminescence device comprising the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US11895219B2Feb 6, 2024
Artificial intelligence calculation semiconductor device and storage device comprising the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US7939663B2May 10, 2011
Metallic compound and organic electroluminescence device comprising the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US7939669B2May 10, 2011
Metallic compound and organic electroluminescence device comprising the same
SAMSUNG ELECTRONICS CO LTD1 citations48
US9490130B2Nov 8, 2016
Method of manufacturing three-dimensional semiconductor memory device in which an oxide layer is formed at bottom of vertical structure of the device
SAMSUNG ELECTRONICS CO LTD0 citations40
US7968715B2Jun 28, 2011
Metallic compound and organic electroluminescence device comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations40