Inventor · disambiguated record
Le Ye
Also filed as: YE LE
8 granted patents·3 pending applications·5 citations·filing 2012–2022
74Inventor score
Files withHANGZHOU WEIMING XINKE TECH CO LTD5HANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD4UNIV BEIJING1YE LE1
Top patents by PatentIndex Score
11 records- 0178US12000792B2CMOS-MEMS humidity sensorHANGZHOU WEIMING XINKE TECH CO LTD·Filed 2020·Granted Jun 4, 2024·1 cites·9 claims
- 0265US9123982B2Directional coupler integrated by CMOS processYE LE·Filed 2012·Granted Sep 1, 2015·4 cites·20 claims
- 0358US12296337B2Electroosmotic micropump apparatus and electroosmotic micropump apparatus groupHANGZHOU WEIMING XINKE TECH CO LTD·Filed 2020·Granted May 13, 2025·0 cites·13 claims
- 0456US11876373B2Power-aware method, power-aware system and converterHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Granted Jan 16, 2024·0 cites·11 claims
- 0555US11796349B2Capacitive sensor chip based on power-aware dynamic charge-domain amplifier arrayHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·9 claims
- 0651US12488911B2Connection structure of thin film electrode and housingHANGZHOU WEIMING XINKE TECH CO LTD·Filed 2021·Granted Dec 2, 2025·0 cites·9 claims
- 0751US11973510B2Capacitance-to-digital conversion circuit, a capacitance-to-digital conversion method and an electronic chipHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·10 claims
- 0851US2022351017A1Circuit for extracting features, neural network and signal processing systemHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Application pending·0 cites
- 0950US2023321338A1Electroosmotic drive module, implanted electroosmotic micropump device, and an electricity leading out methodHANGZHOU WEIMING XINKE TECH CO LTD·Filed 2021·Application pending·0 cites
- 1046US12443783B2Logic circuit design methodHANGZHOU WEIMING XINKE TECH CO LTD·Filed 2020·Granted Oct 14, 2025·0 cites·9 claims
- 1144US2023058216A1A self-aligning preparation method for a drain end underlap region of tunnel field effect transistorUNIV BEIJING·Filed 2020·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →