P

Inventor

WANG PEI-YU

TW72 patents
⚠️ This page may combine multiple inventors who share the name “WANG PEI-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

44 patents
US11195930B1Dec 7, 2021

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11450751B2Sep 20, 2022

Integrated circuit structure with backside via rail

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11251308B2Feb 15, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11177344B2Nov 16, 2021

Multi-gate device with air gap spacer and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10510860B2Dec 17, 2019

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11984402B2May 14, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11942530B2Mar 26, 2024

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11942523B2Mar 26, 2024

Semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11843050B2Dec 12, 2023

Semiconductor arrangement and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11777003B2Oct 3, 2023

Semiconductor structure with wraparound backside amorphous layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11764262B2Sep 19, 2023

Multi-gate device with air gap spacer and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11757042B2Sep 12, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11581410B2Feb 14, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11532744B2Dec 20, 2022

Gate cut structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11410930B2Aug 9, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11387233B2Jul 12, 2022

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11276637B2Mar 15, 2022

Barrier-free interconnect structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11081356B2Aug 3, 2021

Method for metal gate cut and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10964816B2Mar 30, 2021

Method and device for boosting performance of FinFETs via strained spacer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12520518B2Jan 6, 2026

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12495583B2Dec 9, 2025

Semiconductor arrangement and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12484254B2Nov 25, 2025

Integrated circuit structure with backside via rail

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12432975B2Sep 30, 2025

Semiconductor device with backside power rail

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12376356B2Jul 29, 2025

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12347690B2Jul 1, 2025

Method for metal gate cut and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12300739B2May 13, 2025

Metal oxide interlayer structure for NFET and PFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12300728B2May 13, 2025

Semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12094973B2Sep 17, 2024

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12057341B2Aug 6, 2024

Semiconductor device with gate cut structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11996293B2May 28, 2024

Method for metal gate cut and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11916128B2Feb 27, 2024

Metal oxide interlayer structure for nFET and pFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11784233B2Oct 10, 2023

Integrated circuit structure with backside via rail

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11676819B2Jun 13, 2023

Method for metal gate cut and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11616143B2Mar 28, 2023

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11594612B2Feb 28, 2023

Metal oxide interlayer structure for nFET and pFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11581437B2Feb 14, 2023

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532703B2Dec 20, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11158721B2Oct 26, 2021

Metal oxide interlayer structure for nFET and pFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11088281B2Aug 10, 2021

Semiconductor arrangement and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031481B2Jun 8, 2021

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12490476B2Dec 2, 2025

Method and device for boosting performance of FinFETs via strained spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389634B2Aug 12, 2025

Semiconductor device and method of fabricating a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12374624B2Jul 29, 2025

Semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300720B2May 13, 2025

Multi-gate device with air gap spacer and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

ADVANCED SEMICONDUCTOR ENG

2 patents

GOLDEN TSANN YUH ENTPR CO LTD

1 patent

UNIV NAT CHIAO TUNG

1 patent

FONG ZHANG-HUA

1 patent

HEWLETT PACKARD DEVELOPMENT CO

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.