Inventor
YOU WEI-MING
TW28 patents
⚠️ This page may combine multiple inventors who share the name “YOU WEI-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS9577102B1Feb 21, 2017
Method of forming gate and finFET
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations91
US9406675B1Aug 2, 2016
FinFET structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10347720B2Jul 9, 2019
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11145751B2Oct 12, 2021
Semiconductor structure with doped contact plug and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US11018022B2May 25, 2021
Method for forming semiconductor device structure having oxide layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10192985B2Jan 29, 2019
FinFET with doped isolation insulating layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations68
US12266543B2Apr 1, 2025
Semiconductor device structure having gate dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015055B2Jun 18, 2024
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742386B2Aug 29, 2023
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11450741B2Sep 20, 2022
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024716B2Jun 1, 2021
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10950694B2Mar 16, 2021
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10453933B2Oct 22, 2019
Barrier layer for dielectric layers in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9508548B2Nov 29, 2016
Method for forming barrier layer for dielectric layers in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10504998B2Dec 10, 2019
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9768261B2Sep 19, 2017
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9716090B2Jul 25, 2017
FinFet structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10062787B2Aug 28, 2018
FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9697989B2Jul 4, 2017
Method for generating parameter pattern, ion implantation method and feed forward semiconductor manufacturing method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
5 patentsUS7368303B2May 6, 2008
Method for temperature control in a rapid thermal processing system
TAIWAN SEMICONDUCTOR MFG7 citations69
US7973293B2Jul 5, 2011
Implantation quality improvement by xenon/hydrogen dilution gas
TAIWAN SEMICONDUCTOR MFG6 citations67
US6777251B2Aug 17, 2004
Metrology for monitoring a rapid thermal annealing process
TAIWAN SEMICONDUCTOR MFG2 citations60
US6710889B2Mar 23, 2004
Method for improved dielectric layer metrology calibration
TAIWAN SEMICONDUCTOR MFG6 citations58
US6647998B2Nov 18, 2003
Electrostatic charge-free solvent-type dryer for semiconductor wafers
TAIWAN SEMICONDUCTOR MFG0 citations46