Inventor
NEOGI TUHIN GUHA
US16 patents
Patents
16 patentsUS9202751B2Dec 1, 2015
Transistor contacts self-aligned in two dimensions
GLOBALFOUNDRIES INC13 citations92
US9818651B2Nov 14, 2017
Methods, apparatus and system for a passthrough-based architecture
GLOBALFOUNDRIES INC15 citations91
US9236437B2Jan 12, 2016
Method for creating self-aligned transistor contacts
GLOBALFOUNDRIES INC11 citations83
US9026977B2May 5, 2015
Power rail layout for dense standard cell library
GLOBALFOUNDRIES INC15 citations83
US9660040B2May 23, 2017
Transistor contacts self-aligned two dimensions
GLOBALFOUNDRIES INC2 citations73
US9502528B2Nov 22, 2016
Borderless contact formation through metal-recess dual cap integration
GLOBALFOUNDRIES INC3 citations72
US10068806B2Sep 4, 2018
Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell
GLOBALFOUNDRIES INC3 citations71
US9947590B1Apr 17, 2018
Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell
GLOBALFOUNDRIES INC3 citations71
US10236350B2Mar 19, 2019
Method, apparatus and system for a high density middle of line flow
GLOBALFOUNDRIES INC3 citations68
US10559503B2Feb 11, 2020
Methods, apparatus and system for a passthrough-based architecture
GLOBALFOUNDRIES INC1 citations61
US9472455B2Oct 18, 2016
Methods of cross-coupling line segments on a wafer
GLOBALFOUNDRIES INC2 citations61
US10056373B2Aug 21, 2018
Transistor contacts self-aligned in two dimensions
GLOBALFOUNDRIES INC0 citations52
US9666488B1May 30, 2017
Pass-through contact using silicide
GLOBALFOUNDRIES INC0 citations51
US9461128B2Oct 4, 2016
Method for creating self-aligned transistor contacts
GLOBALFOUNDRIES INC0 citations51
US10181522B2Jan 15, 2019
Simplified gate to source/drain region connections
GLOBALFOUNDRIES INC0 citations49
US8962485B2Feb 24, 2015
Reusing active area mask for trench transfer exposure
GLOBALFOUNDRIES INC1 citations46