Inventor

WONG I-HSIEH

TW31 patents

⚠️ This page may combine multiple inventors who share the name “WONG I-HSIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WONG I-HSIEH

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device having a contact plug with an air gap spacer

Methods of reducing parasitic capacitance in multi-gate field-effect transistors

Semiconductor device and manufacturing method thereof

Nano-FET semiconductor device and method of forming

Semiconductor device and method

Semiconductor device and formation thereof

Semiconductor device and formation thereof

Semiconductor device and method

Spacer features for nanosheet-based devices

Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer

Dielectric inner spacers in multi-gate field-effect transistors

Nano-FET semiconductor device and method of forming

Methods for forming source/drain features

Method of manufacturing a FinFET by implanting a dielectric with a dopant

Dielectric inner spacers in multi-gate field-effect transistors

Semiconductor device and formation thereof

Semiconductor device and method of manufacturing thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Epitaxial layer under a gate structure of a transistor

Transistor isolation structures

Semiconductor structure and related methods

Semiconductor device and method

Hybrid SRAM design with nano-structures

Semiconductor device and manufacturing method thereof

Semiconductor device having stressor layer

Semiconductor device including field effect transistor and a method for fabricating the same

UNIV NAT TAIWAN

Field effect transistors and methods of forming same

Field effect transistors and methods of forming same