Inventor

LEE YEEHENG

US46 patents

⚠️ This page may combine multiple inventors who share the name “LEE YEEHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE YEEHENG

ALPHA & OMEGA SEMICONDUCTOR

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

High density trench mosfet with single mask pre-defined gate and contact trenches

High density trench MOSFET with single mask pre-defined gate and contact trenches

Split-gate trench power MOSFET with protected shield oxide

Termination trench for power MOSFET applications

Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Semiconductor device with termination structure for power MOSFET applications

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Method for forming dual oxide trench gate power MOSFET using oxide filled trench

Method of forming a self-aligned charge balanced power DMOS

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

MOSFET with integrated schottky diode

Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs

Split-gate trench power mosfet with protected shield oxide

Split-gate trench power MOSFET with protected shield oxide

High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method

Dual oxide trench gate power MOSFET using oxide filled trench

Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs

Method of forming SGT MOSFETs with improved termination breakdown voltage

High density MOSFET array with self-aligned contacts enhancement plug and method

High density MOSFET array with self-aligned contacts enhancement plug and method

LEE YEEHENG

Fabrication of trench DMOS device having thick bottom shielding oxide

Fabrication of trench DMOS device having thick bottom shielding oxide

Termination of high voltage (HV) devices with new configurations and methods

Power MOSFET device with self-aligned integrated Schottky diode

High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method

Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS

Power MOSFET device with self-aligned integrated Schottky and its manufacturing method

Assymetric poly gate for optimum termination design in trench power MOSFETs

ALPHA & OMEGA SEMICONDUCTOR INCORPORATED

MOSFET with integrated schottky diode

Power device with high aspect ratio trench contacts and submicron pitches between trenches

Power device with high aspect ratio trench contacts and submicron pitches between trenches

BOBDE MADHUR

Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode

Lateral super junctions with high substrate breakdown and build in avalanche clamp diode

YILMAZ HAMZA

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions

CHEN JOHN

Method of forming a self-aligned charge balanced power DMOS

GUAN LINGPENG

Manufacturing methods for accurately aligned and self-balanced superjunction devices

GUAN LINGPING

Manufacturing methods for accurately aligned and self-balanced superjunction devices

WANG XIAOBIN

Method of filling large deep trench with high quality oxide for semiconductor devices