Method of forming a self-aligned charge balanced power DMOS

Abstract

Self-aligned charge balanced semiconductor devices and methods for forming such devices are disclosed. One or more planar gates are formed over a semiconductor substrate of a first conductivity type. One or more deep trenches are etched in the semiconductor self-aligned to the planar gates. The trenches are filled with a semiconductor material of a second conductivity type such that the deep trenches are charge balanced with the adjacent regions of the semiconductor substrate Source and body regions are formed by implanting dopants onto the filled trenches. This process can form self-aligned charge balanced devices with a cell pitch less than 12 microns.

What is claimed is: 
     
       1. A method for forming a self-aligned charge balanced semiconductor device comprising:
 a) forming one or more planar gates over a semiconductor substrate of a first conductivity type; 
 b) etching one or more deep trenches in the semiconductor substrate self-aligned to the planar gates; 
 c) filling said deep trenches with a semiconductor material of a second conductivity type such that the deep trenches are charge balanced with the adjacent regions of the semiconductor substrate; and 
 d) forming source and body regions by implanting dopants onto the filled trenches. 
 
     
     
       2. The method of  claim 1  wherein the substrate includes a heavily doped bottom layer and a less heavily doped epitaxial layer over the bottom layer. 
     
     
       3. The method of  claim 1  wherein b) includes forming a top gate insulating layer over the planar gate and using the planar gate and top gate insulating layer as a hard mask for etching the deep trenches. 
     
     
       4. The method of  claim 3  wherein c) includes filling said deep trenches by selective epitaxial growth (SEG) of semiconductor material of a second conductivity type within the trenches, using the planar gate and top gate insulating layer as a hard mask. 
     
     
       5. The method of  claim 3  wherein b) further comprises forming one or more sidewall spacers at one or more corresponding edges of the planar gate before etching the one or more deep trenches. 
     
     
       6. The method of  claim 5  wherein the sidewall spacers are made of nitride. 
     
     
       7. The method of  claim 5 , wherein d) includes implanting the dopants by performing source and body implants at a top surface of the semiconductor substrate, adjacent to the planar gates, wherein prior to performing source and body implants, the sidewall spacers are removed. 
     
     
       8. The method of  claim 1  wherein c) includes filling said deep trenches by epitaxially growing semiconductor material of a second conductivity type within the trenches. 
     
     
       9. The method of  claim 1  wherein d) includes implanting the dopants by performing source and body implants at a top surface of the semiconductor substrate, adjacent to the planar gates. 
     
     
       10. The method of  claim 9  wherein the source and body implants are performed self-aligned to the planar gates. 
     
     
       11. The method of  claim 1  further comprising forming a termination region in the semiconductor substrate, the termination region having an insulating layer in place of a planar gate. 
     
     
       12. The method of  claim 11  wherein forming the termination region includes forming a deep trench in the termination region simultaneously with forming the deep trench in b). 
     
     
       13. The method of  claim 1  further comprising forming a top insulator layer over the semiconductor device and etching contact holes in the top insulator layer which extend down to a level of the semiconductor substrate. 
     
     
       14. The method of  claim 13  further comprising forming a source metal on top of the device and a drain metal on a bottom of the semiconductor substrate. 
     
     
       15. The method of  claim 1  wherein filling said deep trenches with semiconductor material further comprises filling said deep trenches with silicon-germanium (Si x Ge y ). 
     
     
       16. The method of  claim 1  wherein a) includes forming one or more insulator layers on a surface of a semiconductor substrate and forming the one or more planar gates on one or more of the insulator layers, whereby the planar gate is electrically insulated from the semiconductor substrate. 
     
     
       17. The method of  claim 16 , wherein b) includes forming one or more openings through the one or more insulators to expose a surface of the substrate; forming one or more sidewall spacers on one or more sidewalls of the one or more openings; and etching the substrate with a maskless etch process to form the one or more deep trenches in a self-aligned fashion, wherein the one or more sidewall spacers are resistant to attack by the etch process. 
     
     
       18. A self-aligned charge balanced semiconductor device made according to the method of  claim 1 , wherein a cell pitch between adjacent device trenches is less than 12 microns.