Inventor · disambiguated record
Lingpeng Guan
Also filed as: GUAN LINGPENG
85 granted patents·7 pending applications·636 citations·filing 2008–2024
99Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR39GUAN LINGPENG14ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD11BOBDE MADHUR11ALPHA & OMEGA SEMICONDUCTOR INT LP8
Top patents by PatentIndex Score
92 records- 0198US9312381B1Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Apr 12, 2016·17 cites·20 claims
- 0297US9583586B1Transient voltage suppressor (TVS) with reduced breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Feb 28, 2017·19 cites·22 claims
- 0397US8680613B2Termination design for high voltage deviceGUAN LINGPENG·Filed 2012·Granted Mar 25, 2014·29 cites·7 claims
- 0496US8575685B2Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply pathBOBDE MADHUR·Filed 2011·Granted Nov 5, 2013·22 cites·19 claims
- 0595US9281368B1Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·20 cites·10 claims
- 0695US9171949B1Semiconductor device including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Oct 27, 2015·17 cites·14 claims
- 0795US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 0895US8698196B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageGUAN LINGPENG·Filed 2011·Granted Apr 15, 2014·29 cites·10 claims
- 0995US8575695B2Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diodeBOBDE MADHUR·Filed 2009·Granted Nov 5, 2013·36 cites·18 claims
- 1095US8507978B2Split-gate structure in trench-based silicon carbide power deviceBHALLA ANUP·Filed 2011·Granted Aug 13, 2013·23 cites·19 claims
- 1195US7892924B1Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Feb 22, 2011·39 cites·21 claims
- 1294US9129822B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 8, 2015·12 cites·12 claims
- 1394US8476698B2Corner layout for superjunction deviceGUAN LINGPENG·Filed 2010·Granted Jul 2, 2013·20 cites·6 claims
- 1494US8338854B2TVS with low capacitance and forward voltage drop with depleted SCR as steering diodeBOBDE MADHUR·Filed 2009·Granted Dec 25, 2012·31 cites·22 claims
- 1594US7943989B2Nano-tube MOSFET technology and devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted May 17, 2011·25 cites·18 claims
- 1693US8373208B2Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 12, 2013·17 cites·14 claims
- 1792US10931276B1Combined IGBT and superjunction MOSFET device with tuned switching speedALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Feb 23, 2021·6 cites·14 claims
- 1892US8519476B2Method of forming a self-aligned charge balanced power DMOSCHEN JOHN·Filed 2009·Granted Aug 27, 2013·16 cites·15 claims
- 1991US9318587B2Injection control in semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 19, 2016·9 cites·24 claims
- 2091US9224852B2Corner layout for high voltage semiconductor devicesGUAN LINGPENG·Filed 2012·Granted Dec 29, 2015·11 cites·12 claims
- 2191US8975720B2Corner layout for superjunction deviceGUAN LINGPENG·Filed 2013·Granted Mar 10, 2015·11 cites·4 claims
- 2291US8933506B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2011·Granted Jan 13, 2015·15 cites·9 claims
- 2390US9620630B2Injection control in semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Apr 11, 2017·5 cites·30 claims
- 2490US8710627B2Uni-directional transient voltage suppressor (TVS)GUAN LINGPENG·Filed 2011·Granted Apr 29, 2014·9 cites·28 claims
- 2589US9865678B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jan 9, 2018·4 cites·9 claims
- 2689US9685523B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2014·Granted Jun 20, 2017·6 cites·8 claims
- 2789US9450045B1Method for forming lateral super-junction structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·6 cites·12 claims
- 2889US8785306B2Manufacturing methods for accurately aligned and self-balanced superjunction devicesGUAN LINGPENG·Filed 2011·Granted Jul 22, 2014·11 cites·5 claims
- 2988US11101137B1Method of making reverse conducting insulated gate bipolar transistorALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2020·Granted Aug 24, 2021·2 cites·15 claims
- 3088US8557671B2Method for forming a transient voltage suppressor having symmetrical breakdown voltagesGUAN LINGPENG·Filed 2012·Granted Oct 15, 2013·8 cites·31 claims
- 3188US8288839B2Transient voltage suppressor having symmetrical breakdown voltagesGUAN LINGPENG·Filed 2009·Granted Oct 16, 2012·13 cites·23 claims
- 3288US8283213B2Method of minimizing field stop insulated gate bipolar transistor (IGBT) buffer and emitter charge variationBOBDE MADHUR·Filed 2010·Granted Oct 9, 2012·9 cites·10 claims
- 3387US9865694B2Split-gate trench power mosfet with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 9, 2018·4 cites·19 claims
- 3487US8969953B2Method of forming a self-aligned charge balanced power DMOSALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Mar 3, 2015·6 cites·18 claims
- 3586US8835977B2TVS with low capacitance and forward voltage drop with depleted SCR as steering diodeBOBDE MADHUR·Filed 2012·Granted Sep 16, 2014·8 cites·17 claims
- 3685US10580868B2Super-junction corner and termination structure with improved breakdown and robustnessALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2018·Granted Mar 3, 2020·3 cites·12 claims
- 3785US9876073B2Integrated Schottky diode in high voltage semiconductor deviceGUAN LINGPENG·Filed 2017·Granted Jan 23, 2018·3 cites·11 claims
- 3885US9064897B2Termination design for high voltage deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Jun 23, 2015·5 cites·7 claims
- 3985US9000481B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 7, 2015·5 cites·17 claims
- 4084US11728423B2Integrated planar-trench gate power MOSFETALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2021·Granted Aug 15, 2023·1 cites·19 claims
- 4184US8900949B2Staggered column superjunctionGUAN LINGPENG·Filed 2013·Granted Dec 2, 2014·6 cites·10 claims
- 4284US8324053B2High voltage MOSFET diode reverse recovery by minimizing P-body chargesBOBDE MADHUR·Filed 2009·Granted Dec 4, 2012·11 cites·12 claims
- 4383US9741808B2Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 22, 2017·3 cites·23 claims
- 4483US9620584B2Integrated Schottky diode in high voltage semiconductor deviceGUAN LINGPENG·Filed 2014·Granted Apr 11, 2017·3 cites·11 claims
- 4583US8829640B2Configuration and method to generate saddle junction electric field in edge terminationBOBDE MADHUR·Filed 2011·Granted Sep 9, 2014·4 cites·18 claims
- 4683US8829614B2Integrated Schottky diode in high voltage semiconductor deviceGUAN LINGPENG·Filed 2009·Granted Sep 9, 2014·10 cites·12 claims
- 4782US8390058B2Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctionsYILMAZ HAMZA·Filed 2010·Granted Mar 5, 2013·6 cites·20 claims
- 4881US11031465B2Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Jun 8, 2021·2 cites·10 claims
- 4981US10069005B2Termination design for high voltage deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Sep 4, 2018·2 cites·8 claims
- 5081US9991380B2Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jun 5, 2018·2 cites·22 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →