Inventor · disambiguated record
Anup Bhalla
Also filed as: BHALLA ANUP
301 granted patents·24 pending applications·3,226 citations·filing 1996–2024
99Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR144BHALLA ANUP36UNITED SILICON CARBIDE INC25BOBDE MADHUR15GUAN LINGPENG14
Top patents by PatentIndex Score
325 records- 0199US8119482B2MOSFET using gate work function engineering for switching applicationsBHALLA ANUP·Filed 2010·Granted Feb 21, 2012·125 cites·12 claims
- 0298US8299494B2Nanotube semiconductor devicesYILMAZ HAMZA·Filed 2009·Granted Oct 30, 2012·69 cites·23 claims
- 0397US9083343B1Cascode switching circuitUNITED SILICON CARBIDE INC·Filed 2014·Granted Jul 14, 2015·68 cites·28 claims
- 0497US8680613B2Termination design for high voltage deviceGUAN LINGPENG·Filed 2012·Granted Mar 25, 2014·29 cites·7 claims
- 0597US8431989B2Shielded gate trench (SGT) MOSFET devices and manufacturing processesBHALLA ANUP·Filed 2011·Granted Apr 30, 2013·23 cites·19 claims
- 0697US7285822B2Power MOS deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Granted Oct 23, 2007·54 cites·8 claims
- 0796US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 0896US8580667B2Self aligned trench MOSFET with integrated diodeLUI SIK·Filed 2010·Granted Nov 12, 2013·21 cites·14 claims
- 0996US8575685B2Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply pathBOBDE MADHUR·Filed 2011·Granted Nov 5, 2013·22 cites·19 claims
- 1096US8431470B2Approach to integrate Schottky in MOSFETLUI SIK·Filed 2011·Granted Apr 30, 2013·34 cites·24 claims
- 1196US8324683B2Oxide terminated trench MOSFET with three or four masksLUI SIK·Filed 2012·Granted Dec 4, 2012·16 cites·11 claims
- 1296US7910486B2Method for forming nanotube semiconductor devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Mar 22, 2011·45 cites·26 claims
- 1396US7605425B2Power MOS deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Oct 20, 2009·26 cites·16 claims
- 1496US6838722B2Structures of and methods of fabricating trench-gated MIS devicesSILICONIX INC·Filed 2002·Granted Jan 4, 2005·98 cites·7 claims
- 1596US6392290B1Vertical structure for semiconductor wafer-level chip scale packagesSILICONIX INC·Filed 2000·Granted May 21, 2002·171 cites·23 claims
- 1696US6285060B1Barrier accumulation-mode MOSFETSILICONIX INC·Filed 1999·Granted Sep 4, 2001·173 cites·19 claims
- 1795US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 1895US9324807B1Silicon carbide MOSFET with integrated MOS diodeUNITED SILICON CARBIDE INC·Filed 2015·Granted Apr 26, 2016·25 cites·30 claims
- 1995US8980716B2Self aligned trench MOSFET with integrated diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Mar 17, 2015·15 cites·10 claims
- 2095US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 2195US8698196B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageGUAN LINGPENG·Filed 2011·Granted Apr 15, 2014·29 cites·10 claims
- 2295US8575695B2Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diodeBOBDE MADHUR·Filed 2009·Granted Nov 5, 2013·36 cites·18 claims
- 2395US8507978B2Split-gate structure in trench-based silicon carbide power deviceBHALLA ANUP·Filed 2011·Granted Aug 13, 2013·23 cites·19 claims
- 2495US8367501B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 5, 2013·14 cites·16 claims
- 2595US8110869B2Planar SRFET using no additional masks and layout methodBHALLA ANUP·Filed 2007·Granted Feb 7, 2012·39 cites·2 claims
- 2695US7879676B2High density trench mosfet with single mask pre-defined gate and contact trenchesALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 1, 2011·18 cites·20 claims
- 2795US7005347B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 28, 2006·74 cites·17 claims
- 2894US9129822B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 8, 2015·12 cites·12 claims
- 2994US8956940B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 17, 2015·9 cites·22 claims
- 3094US8896131B2Cascode scheme for improved device switching behaviorBHALLA ANUP·Filed 2011·Granted Nov 25, 2014·20 cites·23 claims
- 3194US8828857B2Approach to integrate Schottky in MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Sep 9, 2014·18 cites·20 claims
- 3294US8637926B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jan 28, 2014·11 cites·24 claims
- 3394US8597998B2Power MOS device fabricationBHALLA ANUP·Filed 2012·Granted Dec 3, 2013·11 cites·17 claims
- 3494US8581376B2Stacked dual chip package and method of fabricationYILMAZ HAMZA·Filed 2010·Granted Nov 12, 2013·22 cites·23 claims
- 3594US8476698B2Corner layout for superjunction deviceGUAN LINGPENG·Filed 2010·Granted Jul 2, 2013·20 cites·6 claims
- 3694US8441046B2Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performancesBOBDE MADHUR·Filed 2010·Granted May 14, 2013·19 cites·14 claims
- 3794US8338854B2TVS with low capacitance and forward voltage drop with depleted SCR as steering diodeBOBDE MADHUR·Filed 2009·Granted Dec 25, 2012·31 cites·22 claims
- 3894US8154108B2Dual-leadframe multi-chip package and method of manufactureLIU KAI·Filed 2010·Granted Apr 10, 2012·15 cites·5 claims
- 3994US7943989B2Nano-tube MOSFET technology and devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted May 17, 2011·25 cites·18 claims
- 4094US7923774B2Power MOS device with conductive contact layerALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Apr 12, 2011·17 cites·12 claims
- 4194US7745878B2Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contactALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted Jun 29, 2010·28 cites·4 claims
- 4294US7504676B2Planar split-gate high-performance MOSFET structure and manufacturing methodALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·21 cites·23 claims
- 4394US7453119B2Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contactALPHS & OMEGA SEMICONDUCTOR LT·Filed 2006·Granted Nov 18, 2008·47 cites·20 claims
- 4493US8809143B2Fabrication of MOS device with schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·9 cites·8 claims
- 4593US8748268B1Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingPAN JI·Filed 2012·Granted Jun 10, 2014·13 cites·8 claims
- 4693US8373208B2Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 12, 2013·17 cites·14 claims
- 4793US8193580B2Shielded gate trench MOSFET device and fabricationCHEN JOHN·Filed 2009·Granted Jun 5, 2012·21 cites·11 claims
- 4893US7939882B2Integration of sense FET into discrete power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted May 10, 2011·24 cites·20 claims
- 4993US7767526B1High density trench MOSFET with single mask pre-defined gate and contact trenchesALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Aug 3, 2010·19 cites·20 claims
- 5092US9219003B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Dec 22, 2015·5 cites·22 claims
Showing the top 50 of 325 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →