Inventor · disambiguated record
Yeeheng Lee
Also filed as: LEE YEEHENG
46 granted patents·2 pending applications·435 citations·filing 2009–2018
98Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR27LEE YEEHENG10ALPHA & OMEGA SEMICONDUCTOR INCORPORATED3BOBDE MADHUR2YILMAZ HAMZA2
Top patents by PatentIndex Score
48 records- 0197US9190512B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 17, 2015·20 cites·9 claims
- 0297US8809948B1Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·34 cites·18 claims
- 0396US9356022B2Semiconductor device with termination structure for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 31, 2016·11 cites·23 claims
- 0496US8951867B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Feb 10, 2015·22 cites·26 claims
- 0596US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 0695US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 0795US9281368B1Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·20 cites·10 claims
- 0895US9136380B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·18 cites·10 claims
- 0995US8575695B2Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diodeBOBDE MADHUR·Filed 2009·Granted Nov 5, 2013·36 cites·18 claims
- 1095US7892924B1Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Feb 22, 2011·39 cites·21 claims
- 1195US7879676B2High density trench mosfet with single mask pre-defined gate and contact trenchesALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 1, 2011·18 cites·20 claims
- 1294US9450088B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·8 cites·35 claims
- 1394US9105494B2Termination trench for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Aug 11, 2015·14 cites·27 claims
- 1493US7767526B1High density trench MOSFET with single mask pre-defined gate and contact trenchesALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Aug 3, 2010·19 cites·20 claims
- 1592US8519476B2Method of forming a self-aligned charge balanced power DMOSCHEN JOHN·Filed 2009·Granted Aug 27, 2013·16 cites·15 claims
- 1692US8252647B2Fabrication of trench DMOS device having thick bottom shielding oxideLEE YEEHENG·Filed 2009·Granted Aug 28, 2012·21 cites·14 claims
- 1790US9412733B2MOSFET with integrated schottky diodeALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2013·Granted Aug 9, 2016·8 cites·15 claims
- 1889US9484453B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 1, 2016·5 cites·10 claims
- 1989US9281394B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·6 cites·19 claims
- 2089US8785306B2Manufacturing methods for accurately aligned and self-balanced superjunction devicesGUAN LINGPENG·Filed 2011·Granted Jul 22, 2014·11 cites·5 claims
- 2188US8803251B2Termination of high voltage (HV) devices with new configurations and methodsLEE YEEHENG·Filed 2011·Granted Aug 12, 2014·10 cites·5 claims
- 2287US10020380B2Power device with high aspect ratio trench contacts and submicron pitches between trenchesALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2015·Granted Jul 10, 2018·5 cites·10 claims
- 2387US9865694B2Split-gate trench power mosfet with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 9, 2018·4 cites·19 claims
- 2487US8969953B2Method of forming a self-aligned charge balanced power DMOSALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Mar 3, 2015·6 cites·18 claims
- 2585US8587061B2Power MOSFET device with self-aligned integrated Schottky diodeLEE YEEHENG·Filed 2012·Granted Nov 19, 2013·6 cites·5 claims
- 2684US9190478B2Method for forming dual oxide trench gate power MOSFET using oxide filled trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Nov 17, 2015·6 cites·8 claims
- 2784US9000514B2Fabrication of trench DMOS device having thick bottom shielding oxideLEE YEEHENG·Filed 2012·Granted Apr 7, 2015·6 cites·9 claims
- 2883US10008579B2MOSFET with integrated schottky diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jun 26, 2018·2 cites·15 claims
- 2983US9741808B2Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 22, 2017·3 cites·23 claims
- 3082US8390058B2Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctionsYILMAZ HAMZA·Filed 2010·Granted Mar 5, 2013·6 cites·20 claims
- 3181US9136377B2High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and methodLEE YEEHENG·Filed 2013·Granted Sep 15, 2015·5 cites·8 claims
- 3278US9818829B2Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Nov 14, 2017·2 cites·6 claims
- 3376US10192982B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 29, 2019·1 cites·13 claims
- 3476US8252648B2Power MOSFET device with self-aligned integrated Schottky and its manufacturing methodLEE YEEHENG·Filed 2010·Granted Aug 28, 2012·3 cites·11 claims
- 3572US10424654B2Power device with high aspect ratio trench contacts and submicron pitches between trenchesALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2018·Granted Sep 24, 2019·1 cites·13 claims
- 3668US8697520B2Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETSLEE YEEHENG·Filed 2012·Granted Apr 15, 2014·2 cites·21 claims
- 3767US9673289B2Dual oxide trench gate power MOSFET using oxide filled trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Jun 6, 2017·1 cites·20 claims
- 3866US9401409B2High density MOSFET array with self-aligned contacts enhancement plug and methodALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Jul 26, 2016·1 cites·11 claims
- 3965US9647059B2Manufacturing methods for accurately aligned and self-balanced superjunction devicesGUAN LINGPING·Filed 2014·Granted May 9, 2017·2 cites·7 claims
- 4065US8247297B2Method of filling large deep trench with high quality oxide for semiconductor devicesWANG XIAOBIN·Filed 2009·Granted Aug 21, 2012·2 cites·11 claims
- 4164US10297594B2High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and methodALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 21, 2019·1 cites·14 claims
- 4263US9595587B2Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 14, 2017·1 cites·7 claims
- 4361US9431495B2Method of forming SGT MOSFETs with improved termination breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Aug 30, 2016·1 cites·5 claims
- 4460US9450050B2Lateral super junctions with high substrate breakdown and build in avalanche clamp diodeBOBDE MADHUR·Filed 2013·Granted Sep 20, 2016·1 cites·21 claims
- 4552US9627526B2Assymetric poly gate for optimum termination design in trench power MOSFETsLEE YEEHENG·Filed 2014·Granted Apr 18, 2017·0 cites·9 claims
- 4651US9196701B2High density MOSFET array with self-aligned contacts enhancement plug and methodALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Nov 24, 2015·0 cites·7 claims
- 4745US2016372542A9Termination of high voltage (hv) devices with new configurations and methodsLEE YEEHENG·Filed 2014·Application pending·0 cites
- 4844US2017125531A9Thicker bottom oxide for reduced miller capacitance in trench metal oxide semiconductor field effect transistor (mosfet)LEE YEEHENG·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →