Inventor

PARK KITAE

KR115 patents

⚠️ This page may combine multiple inventors who share the name “PARK KITAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK KITAE

SAMSUNG ELECTRONICS CO LTD

Method for operating non-volatile memory device and memory controller

Data storage system having multi-bit memory device and operating method thereof

Storage device and a write method including a coarse program operation and fine program operation

Nonvolatile memory device and method of driving word line of the nonvolatile memory

3D flash memory device having different dummy word lines and data storage devices including same

Nonvolatile memory device having selectable sensing modes, memory system having the same and programming method thereof

Storage device and a write method thereof

Memory system and programming method thereof

Memory systems and block copy methods thereof

Nonvolatile memory device with flag cells and user device including the same

Nonvolatile memory devices having erased-state verify capability and methods of operating same

Non-volatile memory devices and methods of erasing non-volatile memory devices

Nonvolatile memory devices and methods of programming nonvolatile memory devices

Nonvolatile memory device and system, and method of programming a nonvolatile memory device

Memory system and driving method thereof

Nonvolatile memory device, a memory system having the same, and a read method thereof, the read method applying a read pass voltage to a selected wordline after a sensing

3D flash memory device having different dummy word lines utilized during erase operations

3D flash memory device having different dummy word lines and data storage devices including same

Sequentially accessing memory cells in a memory device

Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels

Storage device and related programming method

Memory system and programming method thereof

Memory systems and block copy methods thereof

Flash memory device and program method

PARK KITAE

Nonvolatile memory devices and program methods thereof in which a target verify operation and a pre-pass verify operation are performed simultaneously using a common verify voltage

Flash memory systems and operating methods using adaptive read voltage levels

Nonvolatile memory device and read method

Nonvolatile memory device

NAM SANG-WAN

3D flash memory device having different dummy word lines and data storage devices including same

Method of operating memory controller and data storage device including memory controller

Memory system and method of driving memory system using zone voltages

Memory system and method of driving memory system using zone voltages

KWAK DONGHUN

Nonvolatile memory device and program method thereof

Nonvolatile memory device and method of program verifying the same

Memory system comprising nonvolatile memory device and program method thereof

JOO SANG-HYUN

Memory system and operating method thereof

Memory system and data storage method

BODITECHMED INC

Fluorometer

Multi-fluorescence signal analyzer

HWANG SOONWOOK

Nonvolatile memory device and programming method

KEMET ELECTRONICS CORP

Asymmetric high voltage capacitor

KIM MOOSUNG

Negative voltage generator, decoder, nonvolatile memory device and memory system using negative voltage

KANG MYOUNG GON

Flash memory devices with memory cells strings including dummy transistors with selective threshold voltages

KIM TAE-YOUNG

Non-volatile memory device and read method thereof

PARK SANG-WON

Nonvolatile memory device and method of driving word line of the nonvolatile memory

KIM MINSU

Nonvolatile memory device having split ground selection line structures

SONG YOUNGSUN

Nonvolatile memory devices and methods of programming nonvolatile memory devices

KIM MINSEOK

Nonvolatile memory device having selectable sensing modes, memory system having the same and programming method thereof

OH HYUN-SIL

Methods for programming nonvolatile memory devices

PARK HYUN-WOOK

Method of erasing memory cells when changing their mode of operation within a nonvolatile memory device