Inventor · disambiguated record
Paul R. Besser
Also filed as: BESSER PAUL · BESSER PAUL R · BESSER PAUL RAYMOND
212 granted patents·33 pending applications·4,883 citations·filing 1995–2025
99Inventor score
Files withADVANCED MICRO DEVICES INC180GLOBALFOUNDRIES INC20ADVANCED RISC MACH LTD10SPANSION LLC6BESSER PAUL R4
Top patents by PatentIndex Score
245 records- 0197US6465334B1Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·154 cites·18 claims
- 0296US7402207B1Method and apparatus for controlling the thickness of a selective epitaxial growth layerADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 22, 2008·104 cites·12 claims
- 0396US6811448B1Pre-cleaning for silicidation in an SMOS processADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·123 cites·20 claims
- 0496US6787864B2Mosfets incorporating nickel germanosilicided gate and methods for their formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·126 cites·21 claims
- 0596US6475874B2Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·137 cites·14 claims
- 0695US9515156B2Air gap spacer integration for improved fin device performanceLAM RES CORP·Filed 2015·Granted Dec 6, 2016·42 cites·19 claims
- 0795US6562718B1Process for forming fully silicided gatesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·107 cites·18 claims
- 0895US6368967B1Method to control mechanical stress of copper interconnect line using post-plating copper annealADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·111 cites·39 claims
- 0995US6300203B1Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 9, 2001·101 cites·2 claims
- 1094US7456062B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 25, 2008·25 cites·21 claims
- 1194US6518167B1Method of forming a metal or metal nitride interface layer between silicon nitride and copperADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 11, 2003·81 cites·20 claims
- 1293US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 1393US6830998B1Gate dielectric quality for replacement metal gate transistorsADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 14, 2004·75 cites·9 claims
- 1493US6727560B1Engineered metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 27, 2004·64 cites·9 claims
- 1592US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 1692US7309650B1Memory device having a nanocrystal charge storage region and methodSPANSION LLC·Filed 2005·Granted Dec 18, 2007·22 cites·22 claims
- 1792US6429128B1Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interfaceADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 6, 2002·63 cites·20 claims
- 1891US9484251B1Contact integration for reduced interface and series contact resistanceLAM RES CORP·Filed 2015·Granted Nov 1, 2016·7 cites·18 claims
- 1991US8778789B2Methods for fabricating integrated circuits having low resistance metal gate structuresGLOBALFOUNDRIES INC·Filed 2012·Granted Jul 15, 2014·13 cites·20 claims
- 2091US8039391B1Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layerSPANSION LLC·Filed 2006·Granted Oct 18, 2011·23 cites·5 claims
- 2191US6967160B1Method of manufacturing semiconductor device having nickel silicide with reduced interface roughnessADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 22, 2005·18 cites·14 claims
- 2291US6878592B1Selective epitaxy to improve silicidationADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 12, 2005·51 cites·22 claims
- 2391US6465309B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·57 cites·14 claims
- 2491US6261963B1Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 17, 2001·62 cites·40 claims
- 2590US6703307B2Method of implantation after copper seed depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 9, 2004·55 cites·22 claims
- 2690US6444567B1Process for alloying damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·64 cites·20 claims
- 2790US6174743B1Method of reducing incidence of stress-induced voiding in semiconductor interconnect linesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 16, 2001·114 cites·6 claims
- 2890US5970370AManufacturing capping layer for the fabrication of cobalt salicide structuresADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 19, 1999·83 cites·29 claims
- 2989US10672982B1Fabrication of correlated electron material (CEM) devicesADVANCED RISC MACH LTD·Filed 2018·Granted Jun 2, 2020·5 cites·22 claims
- 3089US6602781B1Metal silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 5, 2003·52 cites·27 claims
- 3189US6365516B1Advanced cobalt silicidation with in-situ hydrogen plasma cleanADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 2, 2002·55 cites·16 claims
- 3288US9553031B1Method for integrating germanides in high performance integrated circuitsLAM RES CORP·Filed 2016·Granted Jan 24, 2017·5 cites·23 claims
- 3388US6867428B1Strained silicon NMOS having silicon source/drain extensions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 15, 2005·46 cites·10 claims
- 3488US6455425B1Selective deposition process for passivating top interface of damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 24, 2002·53 cites·18 claims
- 3588US6297107B1High dielectric constant materials as gate dielectricsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 2, 2001·52 cites·13 claims
- 3687US8623758B1Subtractive metal multi-layer barrier layer for interconnect structureGLOBALFOUNDRIES INC·Filed 2012·Granted Jan 7, 2014·8 cites·20 claims
- 3787US6391750B1Method of selectively controlling contact resistance by controlling impurity concentration and silicide thicknessADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·43 cites·11 claims
- 3887US6368950B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·41 cites·24 claims
- 3987US6319819B1Process for passivating top interface of damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 20, 2001·49 cites·18 claims
- 4087US5918149ADeposition of a conductor in a via hole or trenchADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 29, 1999·93 cites·18 claims
- 4186US7033888B2Engineered metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·33 cites·11 claims
- 4286US6392280B1Metal gate with PVD amorphous silicon layer for CMOS devices and method of making with a replacement gate processADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·38 cites·7 claims
- 4385US7060571B1Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 13, 2006·35 cites·18 claims
- 4485US6511911B1Metal gate stack with etch stop layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 28, 2003·30 cites·10 claims
- 4585US6380057B1Enhancement of nickel silicide formation by use of nickel pre-amorphizing implantADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 30, 2002·34 cites·16 claims
- 4684US9142633B2Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structuresGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 22, 2015·7 cites·17 claims
- 4784US7071086B2Method of forming a metal gate structure with tuning of work function by silicon incorporationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 4, 2006·32 cites·14 claims
- 4884US6730576B1Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted May 4, 2004·28 cites·20 claims
- 4984US6583012B1Semiconductor devices utilizing differently composed metal-based in-laid gate electrodesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 24, 2003·33 cites·11 claims
- 5084US6555479B1Method for forming openings for conductive interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·31 cites·48 claims
Showing the top 50 of 245 patent records by PatentIndex Score.
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