P

Inventor

KHANG YOON HO

KR80 patents
⚠️ This page may combine multiple inventors who share the name “KHANG YOON HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG DISPLAY CO LTD

29 patents
US9666602B2May 30, 2017

Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate

SAMSUNG DISPLAY CO LTD7 citations84
US9379252B2Jun 28, 2016

Thin film transistor and thin film transistor array panel including the same

SAMSUNG DISPLAY CO LTD9 citations84
US8987047B2Mar 24, 2015

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

SAMSUNG DISPLAY CO LTD5 citations84
US8853704B2Oct 7, 2014

Thin film transistor array panel

SAMSUNG DISPLAY CO LTD6 citations84
US10861978B2Dec 8, 2020

Display device

SAMSUNG DISPLAY CO LTD2 citations73
US10388794B2Aug 20, 2019

Display device and manufacturing method thereof

SAMSUNG DISPLAY CO LTD2 citations73
US10192992B2Jan 29, 2019

Display device

SAMSUNG DISPLAY CO LTD3 citations73
US9921794B2Mar 20, 2018

Blind display device

SAMSUNG DISPLAY CO LTD4 citations73
US9837446B2Dec 5, 2017

Thin film transistor array panel and manufacturing method thereof

SAMSUNG DISPLAY CO LTD3 citations73
US9791987B2Oct 17, 2017

Touch screen panel

SAMSUNG DISPLAY CO LTD2 citations73
US9768309B2Sep 19, 2017

Thin film transistor and thin film transistor array panel including the same

SAMSUNG DISPLAY CO LTD3 citations73
US9589998B2Mar 7, 2017

Thin film transistor array panel and manufacturing method thereof

SAMSUNG DISPLAY CO LTD3 citations73
US9552998B2Jan 24, 2017

Thin film transistor, method of manufacturing thin film transistor and flat panel display having the thin film transistor

SAMSUNG DISPLAY CO LTD2 citations73
US9356153B2May 31, 2016

Thin film transistor, display panel having the same and method of manufacturing the same

SAMSUNG DISPLAY CO LTD5 citations73
US9343583B2May 17, 2016

Thin film transistor and thin film transistor array panel including the same

SAMSUNG DISPLAY CO LTD3 citations73
US9281343B2Mar 8, 2016

Thin film transistor display panel and method of manufacturing the same

SAMSUNG DISPLAY CO LTD4 citations73
US9252284B2Feb 2, 2016

Display substrate and method of manufacturing a display substrate

SAMSUNG DISPLAY CO LTD4 citations73
US9048322B2Jun 2, 2015

Display substrate and method of manufacturing the same

SAMSUNG DISPLAY CO LTD6 citations73
US8884286B2Nov 11, 2014

Switching element, display substrate and method of manufacturing the same

SAMSUNG DISPLAY CO LTD6 citations73
US9899634B2Feb 20, 2018

Organic light-emitting diode display including a storage capacitive plate and a driving voltage line formed on the same layer and manufacturing method thereof

SAMSUNG DISPLAY CO LTD3 citations72
US11594639B2Feb 28, 2023

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

SAMSUNG DISPLAY CO LTD1 citations71
US9312279B2Apr 12, 2016

Thin film transistor array substrate, method of manufacturing the same, and display apparatus including the same

SAMSUNG DISPLAY CO LTD2 citations63
US9276086B2Mar 1, 2016

Thin film transistor substrate and method of manufacturing the same

SAMSUNG DISPLAY CO LTD1 citations63
US9147741B2Sep 29, 2015

Thin film transistor display panel and method of manufacturing the same

SAMSUNG DISPLAY CO LTD2 citations63
US9034691B2May 19, 2015

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

SAMSUNG DISPLAY CO LTD3 citations63
US8963154B2Feb 24, 2015

Thin film transistor substrate and method of manufacturing the same

SAMSUNG DISPLAY CO LTD2 citations63
US12087865B2Sep 10, 2024

Thin film transistor and thin film transistor array panel including the same

SAMSUNG DISPLAY CO LTD0 citations62
US11793060B2Oct 17, 2023

Organic light-emitting diode display including a storage capacitive plate and a driving voltage line formed on the same layer and manufacturing method thereof

SAMSUNG DISPLAY CO LTD0 citations61
US11245102B2Feb 8, 2022

Organic light-emitting diode display including a storage capacitive plate and a driving voltage line formed on the same layer and manufacturing method thereof

SAMSUNG DISPLAY CO LTD0 citations61

SAMSUNG ELECTRONICS CO LTD

16 patents
US7371429B2May 13, 2008

Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device

SAMSUNG ELECTRONICS CO LTD52 citations96
US7728172B2Jun 1, 2010

Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device

SAMSUNG ELECTRONICS CO LTD33 citations93
US7705343B2Apr 27, 2010

Phase change random access memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD31 citations92
US7592618B2Sep 22, 2009

Nanoparticle electroluminescence and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD33 citations89
US7696507B2Apr 13, 2010

Storage nodes, phase change memory devices, and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7635628B2Dec 22, 2009

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7504280B2Mar 17, 2009

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US7872908B2Jan 18, 2011

Phase change memory devices and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD7 citations83
US8049202B2Nov 1, 2011

Phase change memory device having phase change material layer containing phase change nano particles

SAMSUNG ELECTRONICS CO LTD7 citations79
US7599216B2Oct 6, 2009

Phase change memory devices and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD6 citations73
US7573058B2Aug 11, 2009

Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories

SAMSUNG ELECTRONICS CO LTD6 citations73
US7824953B2Nov 2, 2010

Method of operating and structure of phase change random access memory (PRAM)

SAMSUNG ELECTRONICS CO LTD2 citations63
US7814933B2Oct 19, 2010

Apparatus and method for stabilizing concentration of aerosol

SAMSUNG ELECTRONICS CO LTD5 citations63
US7642540B2Jan 5, 2010

Phase change random access memory and method of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7288294B2Oct 30, 2007

Method of crystallizing amorphous silicon using nanoparticles

SAMSUNG ELECTRONICS CO LTD4 citations63
US7541633B2Jun 2, 2009

Phase-change RAM and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations62

LEE YONG-SU

2 patents

LEE YONG SU

1 patent

KIM DO-HYUN

1 patent

KIM CHEOL-KYU

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.