Inventor
CHEN HSU-SHUN
TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HSU-SHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS10930344B2Feb 23, 2021
RRAM circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12315562B2May 27, 2025
RRAM circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12014776B2Jun 18, 2024
RRAM circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11393528B2Jul 19, 2022
RRAM circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9934864B2Apr 3, 2018
Method of setting a reference current in a nonvolatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9613710B2Apr 4, 2017
Multiple-time programmable memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9595340B2Mar 14, 2017
Nonvolatile memory device and method of setting a reference current in a nonvolatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9478297B2Oct 25, 2016
Multiple-time programmable memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
CHEN HSU-SHUN
5 patentsUS8629706B2Jan 14, 2014
Power switch and operation method thereof
CHEN HSU-SHUN21 citations92
US8279684B2Oct 2, 2012
Method for extending word-line pulses
CHEN HSU-SHUN3 citations62
US8451669B2May 28, 2013
Multi-power domain design
CHEN HSU-SHUN3 citations61
US9099168B2Aug 4, 2015
Method for extending word-line pulses
CHEN HSU-SHUN0 citations51
US8174911B2May 8, 2012
Multi-power domain design
CHEN HSU-SHUN0 citations51
MACRONIX INT CO LTD
4 patentsUS7020009B2Mar 28, 2006
Bistable magnetic device using soft magnetic intermediary material
MACRONIX INT CO LTD46 citations96
US6759267B2Jul 6, 2004
Method for forming a phase change memory
MACRONIX INT CO LTD67 citations96
US7075131B2Jul 11, 2006
Phase change memory device
MACRONIX INT CO LTD22 citations92
US7245523B2Jul 17, 2007
Bistable magnetic device using soft magnetic intermediary material
MACRONIX INT CO LTD4 citations63
TAIWAN SEMICONDUCTOR MFG
4 patentsUS8355277B2Jan 15, 2013
Biasing circuit and technique for SRAM data retention
TAIWAN SEMICONDUCTOR MFG6 citations73
US9190995B2Nov 17, 2015
Multiple power domain electronic device and related method
TAIWAN SEMICONDUCTOR MFG3 citations63
US8928372B2Jan 6, 2015
Multiple power domain electronic device and related method
TAIWAN SEMICONDUCTOR MFG3 citations63
US9324383B2Apr 26, 2016
Source line voltage regulation scheme for leakage reduction
TAIWAN SEMICONDUCTOR MFG0 citations51