Inventor
LONG SHIBING
CN20 patents
⚠️ This page may combine multiple inventors who share the name “LONG SHIBING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INST OF MICROELECTRONICS CAS
12 patentsUS11189345B2Nov 30, 2021
Method for implementing logic calculation based on a crossbar array structure of resistive switching device
INST OF MICROELECTRONICS CAS4 citations73
US10608177B2Mar 31, 2020
Self-gated RRAM cell and method for manufacturing the same
INST OF MICROELECTRONICS CAS2 citations73
US11245074B2Feb 8, 2022
Resistance random access memory and method for fabricating the same
INST OF MICROELECTRONICS CAS1 citations62
US12423564B2Sep 23, 2025
Neuron circuit and neural network circuit
INST OF MICROELECTRONICS CAS0 citations59
US11223013B2Jan 11, 2022
Conductive bridge semiconductor component and manufacturing method therefor
INST OF MICROELECTRONICS CAS0 citations59
US10297748B2May 21, 2019
Three-terminal atomic switching device and method of manufacturing the same
INST OF MICROELECTRONICS CAS0 citations52
US9508776B2Nov 29, 2016
Gating device cell for cross array of bipolar resistive memory cells
INST OF MICROELECTRONICS CAS1 citations52
US10665780B2May 26, 2020
Selection device for use in bipolar resistive memory and manufacturing method therefor
INST OF MICROELECTRONICS CAS0 citations51
US10418549B2Sep 17, 2019
Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory
INST OF MICROELECTRONICS CAS0 citations48
US10134983B2Nov 20, 2018
Nonvolatile resistive switching memory device and manufacturing method thereof
INST OF MICROELECTRONICS CAS0 citations48
US9779836B2Oct 3, 2017
Method for controlling magnetic multi-domain state
INST OF MICROELECTRONICS CAS0 citations48
US10312439B2Jun 4, 2019
Manufacturing method for a nonvolatile resistive switching memory device
INST OF MICROELECTRONICS CAS0 citations35
THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES
3 patentsUS10700276B2Jun 30, 2020
Preparation method of Cu-based resistive random access memory, and memory
THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES0 citations51
US10305035B2May 28, 2019
Preparation method of Cu-based resistive random access memory
THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES0 citations40
US10720578B2Jul 21, 2020
Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodes
THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES0 citations39