Inventor · disambiguated record
Yong-Young Park
Also filed as: PARK YONG Y · PARK YONG YOUNG
15 granted patents·4 pending applications·132 citations·filing 2001–2017
91Inventor score
Top patents by PatentIndex Score
19 records- 0195US7935641B2Thin film etching methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 3, 2011·40 cites·19 claims
- 0293US7705343B2Phase change random access memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 27, 2010·31 cites·29 claims
- 0386US9000485B2Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the sameLEE JEONG-YUB·Filed 2012·Granted Apr 7, 2015·9 cites·33 claims
- 0483US9056424B2Methods of transferring graphene and manufacturing device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 16, 2015·4 cites·20 claims
- 0578US6600006B2Positive-type photosensitive polyimide precursor and composition comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 29, 2003·28 cites·22 claims
- 0674US10181497B2Optoelectronic device, and image sensor and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 15, 2019·2 cites·28 claims
- 0772US7157204B2Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition comprising the soluble polyimideSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 2, 2007·12 cites·15 claims
- 0866US9184052B2Semiconductor device and manufacturing method of semiconductor device using metal oxideSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 10, 2015·1 cites·15 claims
- 0964US8748969B2Non-volatile memory device including dummy electrodes and method of fabricating the sameWENXU XIANYU·Filed 2009·Granted Jun 10, 2014·3 cites·13 claims
- 1062US8921220B2Selective low-temperature ohmic contact formation method for group III-nitride heterojunction structured deviceWENXU XIANYU·Filed 2012·Granted Dec 30, 2014·1 cites·8 claims
- 1154US9029860B2Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrateSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 12, 2015·0 cites·8 claims
- 1254US7336875B2Enhancement of optical and mechanical properties in a polymeric optical element by annealing under a compressed gasSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 26, 2008·1 cites·10 claims
- 1352US9515189B2Semiconductor device and manufacturing method of semiconductor device using metal oxideSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·0 cites·7 claims
- 1451US9337029B2Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrateSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 10, 2016·0 cites·11 claims
- 1550US8846159B2Mold for fabricating barrier rib and method of fabricating two-layered barrier rib using sameCHO HAN SOL·Filed 2012·Granted Sep 30, 2014·0 cites·12 claims
- 1649US2012048360A1Solar cell and method of manufacturing the sameWENXU XIANYU·Filed 2011·Application pending·0 cites
- 1745US2006108905A1Mold for fabricating barrier rib and method of fabricating two-layered barrier rib using sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1836US2016197122A1Organic photoelectronic devices and image sensors including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 1936US2004113298A1Method for fabricating a preform for plastic optical fiberSAMSUNG ELECTRONICS CO LTD·Filed 2003·Application pending·0 cites
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