Inventor
WEBER OLIVIER
FR18 patents
⚠️ This page may combine multiple inventors who share the name “WEBER OLIVIER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS CROLLES 2 SAS
9 patentsUS11653582B2May 16, 2023
Chip containing an onboard non-volatile memory comprising a phase-change material
ST MICROELECTRONICS CROLLES 2 SAS4 citations72
US9929146B2Mar 27, 2018
Method of forming MOS and bipolar transistors
ST MICROELECTRONICS CROLLES 2 SAS4 citations71
US9653538B2May 16, 2017
Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
ST MICROELECTRONICS CROLLES 2 SAS4 citations71
US12144187B2Nov 12, 2024
Strained transistors and phase change memory
ST MICROELECTRONICS CROLLES 2 SAS0 citations60
US11723220B2Aug 8, 2023
Strained transistors and phase change memory
ST MICROELECTRONICS CROLLES 2 SAS0 citations60
US12232435B2Feb 18, 2025
Chip containing an onboard non-volatile memory comprising a phase-change material
ST MICROELECTRONICS CROLLES 2 SAS0 citations59
US10381478B2Aug 13, 2019
Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
ST MICROELECTRONICS CROLLES 2 SAS0 citations51
US10381344B2Aug 13, 2019
Method of forming MOS and bipolar transistors
ST MICROELECTRONICS CROLLES 2 SAS0 citations50
US9876032B2Jan 23, 2018
Method of manufacturing a device with MOS transistors
ST MICROELECTRONICS CROLLES 2 SAS0 citations38
ST MICROELECTRONICS ROUSSET
3 patentsUS10482957B2Nov 19, 2019
Resistive RAM memory cell
ST MICROELECTRONICS ROUSSET2 citations72
US11818901B2Nov 14, 2023
Integrated circuit including bipolar transistors
ST MICROELECTRONICS ROUSSET0 citations58
US11152430B2Oct 19, 2021
Integrated circuit including bipolar transistors
ST MICROELECTRONICS ROUSSET0 citations58
STMICROELECTRONICS FRANCE
2 patentsCOMMISSARIAT ENERGIE ATOMIQUE
2 patentsUS9099354B2Aug 4, 2015
Transistors with various levels of threshold voltages and absence of distortions between nMOS and pMOS
COMMISSARIAT ENERGIE ATOMIQUE2 citations58
US10332808B2Jun 25, 2019
Device comprising multiple gate structures and method of simultaneously manufacturing different transistors
COMMISSARIAT ENERGIE ATOMIQUE0 citations50