Inventor · disambiguated record
Richard S. Kontra
Also filed as: KONTRA RICHARD S · KONTRA RICHARD STEVEN
13 granted patents·2 pending applications·100 citations·filing 1995–2013
91Inventor score
Top patents by PatentIndex Score
15 records- 0187US6441396B1In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor waferIBM·Filed 2000·Granted Aug 27, 2002·36 cites·18 claims
- 0279US7777302B2Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structureIBM·Filed 2007·Granted Aug 17, 2010·5 cites·18 claims
- 0373US8184465B2Programmable semiconductor deviceTONTI WILLIAM R·Filed 2010·Granted May 22, 2012·3 cites·16 claims
- 0473US6682992B2Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structuresIBM·Filed 2002·Granted Jan 27, 2004·13 cites·31 claims
- 0570US7768815B2Optoelectronic memory devicesIBM·Filed 2005·Granted Aug 3, 2010·5 cites·13 claims
- 0666US6649429B2In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor waferIBM·Filed 2002·Granted Nov 18, 2003·9 cites·2 claims
- 0758US8288747B2Optoelectronic memory devicesCHEN FEN·Filed 2010·Granted Oct 16, 2012·1 cites·19 claims
- 0855US5711858AProcess for depositing a conductive thin film upon an integrated circuit substrateIBM·Filed 1995·Granted Jan 27, 1998·20 cites·18 claims
- 0954US8018017B2Thermo-mechanical cleavable structureIBM·Filed 2005·Granted Sep 13, 2011·1 cites·17 claims
- 1053US7872897B2Programmable semiconductor deviceIBM·Filed 2003·Granted Jan 18, 2011·4 cites·13 claims
- 1152US7247924B2Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structuresIBM·Filed 2003·Granted Jul 24, 2007·3 cites·16 claims
- 1251US2007298526A1Programmable semiconductor deviceBERRY WAYNE S·Filed 2007·Application pending·0 cites
- 1350US8724365B2Programmable semiconductor deviceTONTI WILLIAM R·Filed 2012·Granted May 13, 2014·0 cites·20 claims
- 1447US8945955B2Method of changing reflectance or resistance of a region in an optoelectronic memory deviceIBM·Filed 2013·Granted Feb 3, 2015·0 cites·9 claims
- 1545US2012287707A1Optoelectronic memory devicesCHEN FEN·Filed 2012·Application pending·0 cites
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